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1. (WO2017195968) CMP SLURRY COMPOSITION FOR POLISHING COPPER, AND POLISHING METHOD USING SAME
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Pub. No.: WO/2017/195968 International Application No.: PCT/KR2017/001379
Publication Date: 16.11.2017 International Filing Date: 08.02.2017
IPC:
C09G 1/02 (2006.01) ,C09K 3/14 (2006.01) ,C23F 3/04 (2006.01) ,H01L 21/321 (2006.01) ,H01L 21/304 (2006.01)
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
G
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
1
Polishing compositions
02
containing abrasives or grinding agents
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
K
MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3
Materials not provided for elsewhere
14
Anti-slip materials; Abrasives
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
F
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACES; INHIBITING CORROSION OF METALLIC MATERIAL; INHIBITING INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25247
3
Brightening metals by chemical means
04
Heavy metals
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205
Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
321
After-treatment
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
Applicants:
삼성에스디아이 주식회사 SAMSUNG SDI CO., LTD. [KR/KR]; 경기도 용인시 기흥구 공세로 150-20 150-20, Gongse-ro, Giheung-gu Yongin-si Gyeonggi-do 17084, KR
Inventors:
신나율 SHIN, Na Yool; KR
김원중 KIM, Won Jung; KR
도균봉 DO, Keun Bong; KR
황기욱 HWANG, Ki Wook; KR
Agent:
특허법인 아주 AJU INT'L LAW & PATENT GROUP; 서울시 서초구 사임당로 174, 강남미래타워 12-13층 12-13th Floor, Gangnam Mirae Tower, 174 Saimdang- Ro Seocho-Gu Seoul 06627, KR
Priority Data:
10-2016-005843912.05.2016KR
Title (EN) CMP SLURRY COMPOSITION FOR POLISHING COPPER, AND POLISHING METHOD USING SAME
(FR) COMPOSITION DE SUSPENSION ÉPAISSE DE CMP POUR LE POLISSAGE DE CUIVRE ET PROCÉDÉ DE POLISSAGE L'UTILISANT
(KO) 구리 연마용 CMP 슬러리 조성물 및 이를 이용한 연마 방법
Abstract:
(EN) The present invention relates to: a CMP slurry composition for polishing copper, containing an oxidizing agent, a corrosion inhibitor, a chelating agent, a solvent, and a copolymer of (meth)acrylic acid and a (meth)acrylamide compound, which has an azole substituent; and a polishing method using the same.
(FR) La présente invention concerne : une composition de suspension épaisse de CMP pour le polissage du cuivre, contenant un agent oxydant, un inhibiteur de corrosion, un agent de chélation, un solvant et un copolymère d'acide (méth)acrylique et un composé (méth)acrylamide, qui a un substituant azole ; et un procédé de polissage utilisant ladite composition.
(KO) 본 발명은 (메트)아크릴산과 아졸 치환기를 갖는 (메트)아크릴아미드 화합물의 공중합체, 산화제, 부식 억제제, 착화제, 및 용매를 포함하는 구리 연마용 CMP 슬러리 조성물 및 이를 이용한 연마 방법에 관한 것이다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)