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1. (WO2017192759) MEMORY COMPONENT WITH EFFICIENT WRITE OPERATIONS
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/192759 International Application No.: PCT/US2017/030902
Publication Date: 09.11.2017 International Filing Date: 03.05.2017
IPC:
G06F 12/00 (2006.01) ,G11C 7/10 (2006.01) ,G11C 11/401 (2006.01) ,G11C 11/4096 (2006.01)
G PHYSICS
06
COMPUTING; CALCULATING; COUNTING
F
ELECTRIC DIGITAL DATA PROCESSING
12
Accessing, addressing or allocating within memory systems or architectures
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
7
Arrangements for writing information into, or reading information out from, a digital store
10
Input/output (I/O) data interface arrangements, e.g. I/O data control circuits, I/O data buffers
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21
using electric elements
34
using semiconductor devices
40
using transistors
401
forming cells needing refreshing or charge regeneration, i.e. dynamic cells
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21
using electric elements
34
using semiconductor devices
40
using transistors
401
forming cells needing refreshing or charge regeneration, i.e. dynamic cells
4063
Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
407
for memory cells of the field-effect type
409
Read-write (R-W) circuits
4096
Input/output (I/O) data management or control circuits, e.g. reading or writing circuits, I/O drivers, bit-line switches
Applicants: RAMBUS INC.[US/US]; 1050 Enterprise Way, Suite 700 Sunnyvale, CA 94089, US
Inventors: WARE, Frederick, A.; US
LINSTADT, John, Eric; US
HAUKNESS, Brent, Steven; US
WRIGHT, Kenneth, L.; US
VOGELSANG, Thomas; US
Agent: GRANGE, Kevin, O.; US
PORTNOVA, Marina; US
Priority Data:
62/330,97903.05.2016US
62/347,91609.06.2016US
Title (EN) MEMORY COMPONENT WITH EFFICIENT WRITE OPERATIONS
(FR) COMPOSANT DE MÉMOIRE À OPÉRATIONS D'ÉCRITURE EFFICACES
Abstract:
(EN) A memory component includes a first memory bank. The first memory bank has a plurality of sub-arrays having sub-rows of memory elements. The memory component includes a write driver, coupled to the first memory bank, to perform a write operation of an entire sub-row of a sub-array. To perform the write operation, the write driver is to load a burst of write data to the memory bank. The memory bank may then activate a plurality of sense amplifiers associated with a plurality of memory elements of the entire sub-row to load the burst of write data to the plurality of sense amplifiers.
(FR) La présente invention concerne un composant de mémoire qui comprend une première banque de mémoire. La première banque de mémoire comporte une pluralité de sous-réseaux ayant des sous-rangées d'éléments de mémoire. Le composant de mémoire comprend un pilote d'écriture, couplé à la première banque de mémoire, permettant d'effectuer une opération d'écriture de la totalité d'une sous-rangée d'un sous-réseau. Afin d'effectuer l'opération d'écriture, le pilote d'écriture doit charger une rafale de données d'écriture dans la banque de mémoire. La banque de mémoire peut ensuite activer une pluralité d'amplificateurs de détection associés à une pluralité d'éléments de mémoire de la totalité de la sous-rangée afin de charger la rafale de données d'écriture dans la pluralité d'amplificateurs de détection.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)