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1. (WO2017191943) TEMPLATE FOR GROWING GROUP III-NITRIDE SEMICONDUCTOR LAYER, GROUP III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, AND MANUFACTURING METHOD THEREFOR
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Pub. No.:    WO/2017/191943    International Application No.:    PCT/KR2017/004556
Publication Date: 09.11.2017 International Filing Date: 28.04.2017
IPC:
H01L 23/14 (2006.01), H01L 21/48 (2006.01), H01L 23/498 (2006.01), H01L 33/48 (2010.01), H01L 21/78 (2006.01), H01L 23/00 (2006.01), H01L 33/00 (2010.01), H01L 33/02 (2010.01), H01L 33/64 (2010.01)
Applicants: AN, Sang Jeong [KR/KR]; (KR)
Inventors: AN, Sang Jeong; (KR)
Priority Data:
10-2016-0054160 02.05.2016 KR
10-2016-0054162 02.05.2016 KR
10-2016-0054575 03.05.2016 KR
Title (EN) TEMPLATE FOR GROWING GROUP III-NITRIDE SEMICONDUCTOR LAYER, GROUP III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, AND MANUFACTURING METHOD THEREFOR
(FR) MATRICE DE CROISSANCE D'UNE COUCHE SEMI-CONDUCTRICE DE NITRURE DU GROUPE III, DISPOSITIF ÉLECTROLUMINESCENT À SEMI-CONDUCTEURS DE NITRURE DU GROUPE III ET PROCÉDÉS DE FABRICATION ASSOCIÉS
(KO) 3족 질화물 반도체층 성장을 위한 템플릿, 3족 질화물 반도체 발광소자 및 이들을 제조하는 방법
Abstract: front page image
(EN)Provided are a template for growing a group III-nitride semiconductor layer, a group III-nitride semiconductor light emitting device comprising the same, and manufacturing methods therefor. A template for growing a group III-nitride semiconductor layer comprises: a growth substrate having a first surface, a second surface facing the first surface, and a groove extending from the first surface into the inside thereof; a heat dissipating insert fixedly inserted into the groove; and a nucleation layer formed on the first surface which is partially removed.
(FR)L'invention se rapporte à une matrice qui permet la croissance d'une couche semi-conductrice de nitrure du groupe III, à un dispositif électroluminescent à semi-conducteurs de nitrure du groupe III comportant ladite couche et à des procédés de fabrication associés. Une matrice qui permet la croissance d'une couche semi-conductrice de nitrure du groupe III comprend : un substrat de croissance ayant une première surface, une seconde surface en regard de la première surface, et une rainure s'étendant depuis la première surface jusqu'à l'intérieur de ladite couche semi-conductrice ; un dispositif de dissipation thermique inséré à demeure dans la rainure ; une couche de nucléation formée sur la première surface qui est partiellement éliminée.
(KO)3족 질화물 반도체층 성장을 위한 템플릿, 이를 포함하는 3족 질화물 반도체 발광소자 및 이들을 제조하는 방법이 제공된다. 3족 질화물 반도체층 성장을 위한 템플릿은, 제1 면 및 제1 면에 대향하는 제2 면을 가지는 성장 기판으로서, 제1 면으로부터 성장 기판 내부로 뻗어 있는 홈을 구비하는 성장 기판; 홈 내에 삽입되어 고정되는 방열용 인서트(insert); 그리고 일부가 제거된 제1 면 상에 형성되는 씨앗층(nucleation layer)을 포함한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)