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1. (WO2017191930) METHOD AND COMPOSITION FOR IMPROVING LWR IN PATTERNING STEP USING NEGATIVE TONE PHOTORESIST

Pub. No.:    WO/2017/191930    International Application No.:    PCT/KR2017/004450
Publication Date: Fri Nov 10 00:59:59 CET 2017 International Filing Date: Thu Apr 27 01:59:59 CEST 2017
IPC: G03F 7/038
G03F 7/16
G03F 7/20
G03F 7/004
Applicants: YOUNG CHANG CHEMICAL CO., LTD
영창케미칼 주식회사
Inventors: LEE, Su Jin
이수진
KIM, Gi Hong
김기홍
LEE, Seung Hun
이승훈
LEE, Seung Hyun
이승현
Title: METHOD AND COMPOSITION FOR IMPROVING LWR IN PATTERNING STEP USING NEGATIVE TONE PHOTORESIST
Abstract:
The present invention relates to a method for improving the line width roughness (LWR) of a photoresist pattern using a negative tone photoresist in a semiconductor manufacturing process. More specifically, the objective of the present invention is to provide a composition capable of improving the LWR to secure a higher pattern CDU after a negative tone developing step, and an application method for the composition, to improve the LRW thereby providing better CDU compared to existing methods.