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1. WO2017191721 - ELASTIC WAVE DEVICE, DUPLEXER, AND MULTIPLEXER

Publication Number WO/2017/191721
Publication Date 09.11.2017
International Application No. PCT/JP2017/014003
International Filing Date 03.04.2017
IPC
H03H 9/25 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
25Constructional features of resonators using surface acoustic waves
H01L 23/29 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
29characterised by the material
H03H 9/64 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
46Filters
64using surface acoustic waves
H03H 9/72 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
70Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common or source
72Networks using surface acoustic waves
CPC
H01L 2224/16225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
10Bump connectors; Manufacturing methods related thereto
15Structure, shape, material or disposition of the bump connectors after the connecting process
16of an individual bump connector
161Disposition
16151the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
16221the body and the item being stacked
16225the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L 23/29
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
29characterised by the material ; , e.g. carbon
H03H 9/25
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
25Constructional features of resonators using surface acoustic waves
H03H 9/64
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
46Filters
64using surface acoustic waves
H03H 9/72
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
70Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
72Networks using surface acoustic waves
Applicants
  • 株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP]/[JP]
Inventors
  • 上坂 健一 UESAKA, Kenichi
Agents
  • 吉川 修一 YOSHIKAWA, Shuichi
  • 傍島 正朗 SOBAJIMA, Masaaki
Priority Data
2016-09281802.05.2016JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) ELASTIC WAVE DEVICE, DUPLEXER, AND MULTIPLEXER
(FR) DISPOSITIF À ONDES ÉLASTIQUES, DUPLEXEUR, ET MULTIPLEXEUR
(JA) 弾性波装置、デュプレクサ及びマルチプレクサ
Abstract
(EN)
Provided is an elastic wave device (1) comprising a plurality of elastic wave elements, and a mounting substrate (40) on which the plurality of elastic wave elements are mounted. The plurality of elastic wave elements includes a first elastic wave element (10), and a second elastic wave element (20) that is positioned adjacent to the first elastic wave element (10) on the mounting substrate (40). The first elastic wave element (10) is an element, to which electric power larger than electric power applied to the second elastic wave element (20) is applied. At least a part of the outer surface of the first elastic wave element (10) has a surface roughness larger than that of the outer surface of the second elastic wave element (20).
(FR)
La présente invention concerne un dispositif à ondes élastiques (1) comprenant une pluralité d'éléments à ondes élastiques, et un substrat de montage (40) sur lequel est montée la pluralité d'éléments à ondes élastiques. La pluralité d'éléments à ondes élastiques comporte un premier élément à ondes élastiques (10), et un second élément à ondes élastiques (20) qui est positionné de manière adjacente au premier élément à ondes élastiques (10) sur le substrat de montage (40). Le premier élément à ondes élastiques (10) est un élément auquel est appliquée une puissance électrique supérieure à la puissance électrique appliquée au second élément à ondes élastiques (20). Au moins une partie de la surface externe du premier élément à ondes élastiques (10) présente une rugosité de surface supérieure à celle de la surface externe du second élément à ondes élastiques (20).
(JA)
弾性波装置(1)は、複数の弾性波素子と、複数の弾性波素子が実装される実装基板(40)とを備え、複数の弾性波素子は、第1弾性波素子(10)と、実装基板(40)上で第1弾性波素子(10)の隣に位置する第2弾性波素子(20)とを含み、第1弾性波素子(10)は、第2弾性波素子(20)よりも大きな電力がかかる素子であり、第1弾性波素子(10)の外面の少なくとも一部は、第2弾性波素子(20)の外面よりも表面粗さが大きい。
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