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1. (WO2017191079) A METHOD FOR CREATING STRUCTURES OR DEVICES USING AN ORGANIC ICE RESIST
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2017/191079    International Application No.:    PCT/EP2017/060313
Publication Date: 09.11.2017 International Filing Date: 01.05.2017
IPC:
H01J 37/317 (2006.01), B29C 67/00 (2017.01)
Applicants: DANMARKS TEKNISKE UNIVERSITET [DK/DK]; Anker Engelunds Vej 101 A 2800 Kgs. Lyngby (DK)
Inventors: HAN, Anpan; (DK).
TIDDI, William; (DK).
BELEGGIA, Marco; (DE)
Agent: INSPICOS P/S; Kogle Allé 2 2970 Hørsholm (DK)
Priority Data:
16167903.0 02.05.2016 EP
Title (EN) A METHOD FOR CREATING STRUCTURES OR DEVICES USING AN ORGANIC ICE RESIST
(FR) PROCÉDÉ DE CRÉATION DE STRUCTURES OU DISPOSITIFS AU MOYEN D'UNE RÉSERVE DE GLACE ORGANIQUE
Abstract: front page image
(EN)The invention relates to a method for creating an organic resist on a surface of a cooled substrate, the method comprising the steps of condensing a vapour into a solid film on the surface of the cooled substrate; patterning at least part of the solid film by exposing selected portions of said solid film to at least one electron beam thereby creating the organic resist on 5 the surface of the cooled substrate in accordance with a predetermined pattern; wherein the created organic resist remains essentially intact at ambient conditions; and using the created organic resist as a mask for creating semiconductor structures and/or semiconductor devices.
(FR)Le procédé consiste: à condenser une vapeur en un film solide sur la surface du substrat refroidi; à former des motifs sur au moins une partie du film solide en exposant des parties sélectionnées dudit film solide à au moins un faisceau électronique, créant ainsi la réserve organique sur la surface du substrat refroidi selon un motif prédéterminé, la réserve organique créée demeurant sensiblement intacte dans des conditions ambiantes; et à utiliser la réserve organique créée comme masque pour créer des structures semi-conductrices et/ou des dispositifs semi-conducteurs.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)