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1. (WO2017190030) SEMICONDUCTOR QUANTUM DOT DEVICE AND METHOD FOR FORMING A SCALABLE LINEAR ARRAY OF QUANTUM DOTS
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Pub. No.: WO/2017/190030 International Application No.: PCT/US2017/030162
Publication Date: 02.11.2017 International Filing Date: 28.04.2017
IPC:
H01L 31/0352 (2006.01) ,B82Y 20/00 (2011.01) ,H01L 27/15 (2006.01) ,H01L 31/0224 (2006.01) ,H01L 31/0368 (2006.01) ,H01L 31/042 (2014.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0352
characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
B PERFORMING OPERATIONS; TRANSPORTING
82
NANO-TECHNOLOGY
Y
SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES
20
Nano-optics, e.g. quantum optics or photonic crystals
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15
including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0224
Electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
036
characterised by their crystalline structure or particular orientation of the crystalline planes
0368
including polycrystalline semiconductors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
042
including a panel or array of photoelectric cells, e.g. solar cells
Applicants:
PRINCETON UNIVERSITY [US/US]; 87 Prospect Avenue Princeton, New Jersey 08544, US
Inventors:
PETTA, Jason; US
ZAJAC, David; US
HAZARD, Thomas; US
Agent:
ABELEV, Gary; US
ACKERMAN, Paul D.; US
MILLER, Gregory D.; US
Priority Data:
15/208,22712.07.2016US
62/328,69128.04.2016US
Title (EN) SEMICONDUCTOR QUANTUM DOT DEVICE AND METHOD FOR FORMING A SCALABLE LINEAR ARRAY OF QUANTUM DOTS
(FR) DISPOSITIF À POINTS QUANTIQUES À SEMI-CONDUCTEUR ET PROCÉDÉ DE FORMATION D'UN RÉSEAU LINÉAIRE ÉCHELONNABLE DE POINTS QUANTIQUES
Abstract:
(EN) [0089] An exemplary quantum dot device can be provided, which can include, for example, at least three conductive layers and at least two insulating layers electrically insulating the at least three conductive layers from one another. For example, one of the conductive layers can be composed of a different material than the other two of the conductive layers. The conductive layers can be composed of (i) aluminum, (ii) gold, (iii) copper or (iv) polysilicon, and/or the at least three conductive layers can be composed at least partially of (i) aluminum, (ii) gold, (iii) copper or (iv) polysilicon. The insulating layers can be composed of (i) silicon oxide, (ii) silicon nitride and/or (iii) aluminum oxide.
(FR) Un exemple de dispositif à points quantiques peut être fourni, qui peut comprendre, par exemple, au moins trois couches conductrices et au moins deux couches isolantes isolant électriquement les au moins trois couches conductrices l'une de l'autre. Par exemple, l'une des couches conductrices peut être composée d'un matériau différent des deux autres couches conductrices. Les couches conductrices peuvent être composées (i) d'aluminium, (ii) d'or, (iii) de cuivre ou (iv) de polysilicium, et/ou les au moins trois couches conductrices peuvent être composées au moins partiellement (i) d'aluminium, (ii) d'or, (iii) de cuivre ou (iv) de polysilicium. Les couches isolantes peuvent être composées (i) d'oxyde de silicium, (ii) de nitrure de silicium et/ou (iii) d'oxyde d'aluminium.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)