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1. (WO2017189072) VOLATILE MEMORY DEVICE EMPLOYING A RESISTIVE MEMORY ELEMENT

Pub. No.:    WO/2017/189072    International Application No.:    PCT/US2017/017954
Publication Date: Fri Nov 03 00:59:59 CET 2017 International Filing Date: Thu Feb 16 00:59:59 CET 2017
IPC: H01L 45/00
G11C 13/00
Applicants: SANDISK TECHNOLOGIES LLC
Inventors: KUMAR, Tanmay
ILKBAHAR, Alper
Title: VOLATILE MEMORY DEVICE EMPLOYING A RESISTIVE MEMORY ELEMENT
Abstract:
A volatile resistive memory device includes a resistive memory element including a barrier material portion and a charge-modulated resistive memory material portion. The barrier material portion includes a material selected from germanium and a silicon-germanium alloy, and the charge-modulated resistive memory material portion includes a non-filamentary, electrically conductive metal oxide. The resistive memory device may be a volatile eDRAM device. In operation, reading a resistance state of the resistive memory element does not disturb the resistance state of the charge-modulated resistive memory material portion.