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1. (WO2017189072) VOLATILE MEMORY DEVICE EMPLOYING A RESISTIVE MEMORY ELEMENT
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2017/189072    International Application No.:    PCT/US2017/017954
Publication Date: 02.11.2017 International Filing Date: 15.02.2017
IPC:
H01L 45/00 (2006.01), G11C 13/00 (2006.01)
Applicants: SANDISK TECHNOLOGIES LLC [US/US]; 6900 North Dallas Parkway Suite 325 Plano, TX 75024 (US)
Inventors: KUMAR, Tanmay; (US).
ILKBAHAR, Alper; (US)
Agent: RADOMSKY, Leon; (US).
COHN, Joanna; (US).
CONNOR, David; (US).
GAUL, Allison; (US).
GAYOSO, Tony; (US).
GERETY, Todd; (US).
GILL, Matthew; (US).
GREGORY, Shaun, D.; (US).
HANSEN, Robert; (US).
HUANG, Stephen; (US).
HYAMS, David; (US).
JOHNSON, Timothy; (US).
MAZAHERY, Benjamin; (US).
MURPHY, Timothy; (US).
NGUYEN, Jaqueline; (US).
O'BRIEN, Michelle; (US).
PARK, Byeongju; (US).
RUTT, Steven; (US).
SIMON, Phyllis; (US).
SULSKY, Martin; (US).
GEMMEL, Elizabeth; (US)
Priority Data:
62/327,292 25.04.2016 US
15/251,818 30.08.2016 US
Title (EN) VOLATILE MEMORY DEVICE EMPLOYING A RESISTIVE MEMORY ELEMENT
(FR) DISPOSITIF DE MÉMOIRE VOLATILE EMPLOYANT UN ÉLÉMENT DE MÉMOIRE RÉSISTIVE
Abstract: front page image
(EN)A volatile resistive memory device includes a resistive memory element including a barrier material portion and a charge-modulated resistive memory material portion. The barrier material portion includes a material selected from germanium and a silicon-germanium alloy, and the charge-modulated resistive memory material portion includes a non-filamentary, electrically conductive metal oxide. The resistive memory device may be a volatile eDRAM device. In operation, reading a resistance state of the resistive memory element does not disturb the resistance state of the charge-modulated resistive memory material portion.
(FR)L'invention porte sur un dispositif de mémoire résistive volatile qui comprend un élément de mémoire résistive comprenant une partie en matériau de barrière et une partie en matériau de mémoire résistive à modulation de charge. La partie en matériau de barrière comprend un matériau choisi parmi le germanium et un alliage silicium-germanium, et la partie en matériau de mémoire résistive à modulation de charge comprend un oxyde métallique électroconducteur non filamentaire. Le dispositif de mémoire résistive peut être un dispositif de mémoire eDRAM volatile. En fonctionnement, la lecture d'un état de résistance de l'élément de mémoire résistive ne perturbe pas l'état de résistance de la partie en matériau de mémoire résistive à modulation de charge.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)