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1. (WO2017188656) HIGHLY EFFICIENT GA-POLAR VERTICAL LIGHT-EMITTING DIODE DEVICE AND METHOD FOR PREPARING SAME
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/188656 International Application No.: PCT/KR2017/004216
Publication Date: 02.11.2017 International Filing Date: 20.04.2017
IPC:
H01L 33/02 (2010.01) ,H01L 33/44 (2010.01) ,H01L 33/00 (2010.01)
Applicants: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION[KR/KR]; 145, Anam-ro Seongbuk-gu Seoul 02841, KR
Inventors: SEONG, Tae-Yeon; KR
KIM, Dae-Hyun; KR
Agent: NURY PATENT LAW FIRM; 4F, 15-5, Teheran-ro 25-gil Gangnam-gu Seoul 06131, KR
Priority Data:
10-2016-004992025.04.2016KR
Title (EN) HIGHLY EFFICIENT GA-POLAR VERTICAL LIGHT-EMITTING DIODE DEVICE AND METHOD FOR PREPARING SAME
(FR) DISPOSITIF DE DIODE ÉLECTROLUMINESCENTE VERTICALE À POLARITÉ GA À HAUT RENDEMENT ET SON PROCÉDÉ DE PRÉPARATION
(KO) 고효율 Ga-polar 수직 발광 다이오드 소자 및 그 제조방법
Abstract: front page image
(EN) The present invention provides a vertical light-emitting diode device and a method for preparing same. The vertical light-emitting diode device comprises: a conductive substrate; a p-type GaN layer disposed on the conductive substrate; an active layer disposed on the GaN layer; a first n-type GaN layer disposed on the active layer; an undoped AlN layer disposed on the first n-type GaN layer; a second n-type GaN layer disposed on the AlN layer; and a contact plug passing through the p-type GaN layer, the active layer, the first n-type GaN layer and the AlN layer and coupled to the second n-type GaN layer.
(FR) La présente invention concerne un dispositif de diode électroluminescente verticale et son procédé de préparation. Le dispositif de diode électroluminescente verticale comprend : un substrat conducteur ; une couche de GaN du type p disposée sur le substrat conducteur ; une couche active disposée sur la couche de GaN ; une première couche de GaN du type n disposée sur la couche active ; une couche d'AlN non dopée disposée sur la première couche de GaN du type n ; une seconde couche de GaN du type n disposée sur la couche d'AlN ; et une fiche de contact traversant la couche de GaN du type p, la couche active, la première couche de GaN du type n et la couche d'AlN et couplée à la seconde couche de GaN du type n.
(KO) 본 발명은 수직형 발광 다이오드 소자 및 그 제조 방법을 제공한다. 이 수직형 발광 다이오드 소자는 도전성 기판; 상기 도전성 기판 상에 배치된 p형 GaN층; 상기 GaN층 상에 배치된 활성층; 상기 활성층에 배치된 제1 n 형 GaN층; 상기 제1 n형 GaN 층 상에 배치된 도핑되지 않은 AlN층; 상기 AlN 층 상에 배치된 제2 n형 GaN층; 및 상기 p형 GaN층, 상기 활성층, 상기 제1 n 형 GaN층, 그리고 상기 AlN층을 관통하여 상기 제2 n형 GaN층에 접합하는 콘택 플러그를 포함한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)