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1. (WO2017188145) SUSCEPTOR
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Pub. No.: WO/2017/188145 International Application No.: PCT/JP2017/016030
Publication Date: 02.11.2017 International Filing Date: 21.04.2017
IPC:
H01L 21/205 (2006.01) ,C23C 16/458 (2006.01) ,H01L 21/683 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
458
characterised by the method used for supporting substrates in the reaction chamber
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
Applicants: BRIDGESTONE CORPORATION[JP/JP]; 1-1, Kyobashi 3-chome, Chuo-ku, Tokyo 1048340, JP
Inventors: KOBAYASHI Fumiya; --
Agent: MIYOSHI Hidekazu; JP
ITO Masakazu; JP
TAKAMATSU Toshio; JP
Priority Data:
2016-08777526.04.2016JP
Title (EN) SUSCEPTOR
(FR) SUSCEPTEUR
(JA) サセプタ
Abstract:
(EN) A susceptor (100) includes a plate-like substrate (10). The substrate (10) is provided with: a silicon carbide coating film (11) that covers a surface of the substrate (10); and a concave-shaped wafer placement part (13) on which a wafer is placed. The wafer placement part (13) is provided with a first portion of the silicon carbide coating film (11) that covers the bottom surface (14a) of a concave part (14) provided to the upper surface (12) of the substrate (10); and a plate-like placement surface member (15) disposed on the first portion of the silicon carbide coating film (11). The placement surface member (15) is formed from silicon carbide. The thickness (D1) of the placement surface member (15) is less than the depth (D2) of the concave part (14). The placement surface member (15) has flatness precision higher than at least the first portion of the silicon carbide coating film (11).
(FR) La présente invention concerne un suscepteur (100) qui comprend un substrat (10) en forme de plaque. Le substrat (10) est pourvu : d'un film de revêtement en carbure de silicium (11) qui recouvre une surface du substrat (10) ; et d'une partie de placement de tranche (13) de forme concave sur laquelle est placée une tranche. La partie de placement de tranche (13) est pourvue d'une première partie du film de revêtement en carbure de silicium (11) qui recouvre la surface inférieure (14a) d'une partie concave (14) disposée sur la surface supérieure (12) du substrat (10) ; et d'un élément de surface de placement (15) en forme de plaque disposé sur la première partie du film de revêtement en carbure de silicium (11). L'élément de surface de placement (15) est composé de carbure de silicium. L'épaisseur (D1) de l'élément de surface de placement (15) est inférieure à la profondeur (D2) de la partie concave (14). L'élément de surface de placement (15) présente une précision de planéité supérieure à celle d'au moins la première partie du film de revêtement en carbure de silicium (11).
(JA) サセプタ(100)は、板状の基体(10)を有する。基体(10)は、表面を被覆する炭化ケイ素被膜(11)と、ウェハが載置される凹形状のウェハ載置部(13)とを備える。ウェハ載置部(13)は、基体(10)の上面(12)に設けられた凹部(14)の底面(14a)を覆う炭化ケイ素被膜(11)の第1部位と、炭化ケイ素被膜(11)の第1部位上に配置された板状の載置面部材(15)とを備える。載置面部材(15)は、炭化ケイ素により形成される。載置面部材(15)の厚さ(D1)は、凹部(14)の深さ(D2)よりも薄い。載置面部材(15)は、少なくとも炭化ケイ素被膜(11)の第1部位の平面精度より高い平面精度を有する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)