The invention relates to a power transistor, to a driver, and to an output stage. The power transistor comprises an active area and a metalization plane arranged over the active area for distributing power and for detecting an imminent metalization fault resulting from stress caused by repeated power pulses (RPP stress). Furthermore, the power transistor comprises a further metalization plane (500), which is arranged over the metalization plane and in which galvanically isolated metal elements (510, 520) extend parallel to each other in an extension direction, a pair of which metal elements is used to supply power to the power transistor. The power transistor is characterized in that at least one cut-out is formed in the further metalization plane (500) over the active area. The cut-out causes reduced heat removal. Thus, the power transistor heats up more intensely in the delimited area such that large temperature gradients occur in the transition region defined by the edges of the metal elements.