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1. (WO2017185774) FLIP FOUR-JUNCTION SOLAR CELL STRUCTURE AND PREPARATION METHOD THEREFOR
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Pub. No.: WO/2017/185774 International Application No.: PCT/CN2016/111669
Publication Date: 02.11.2017 International Filing Date: 23.12.2016
IPC:
H01L 31/0687 (2012.01) ,H01L 31/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
068
the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
0687
Multiple junction or tandem solar cells
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants: TIANJIN SANAN OPTOELECTRONICS CO., LTD.[CN/CN]; No. 20 Haitainan Road Huayuan New Technology Industry Development Area Xiqing District Tianjin 300384, CN
Inventors: LI, Senlin; CN
BI, Jingfeng; CN
SONG, Minghui; CN
LIU, Guanzhou; CN
LI, Mingyang; CN
CHEN, Wenjun; CN
WU, Chaoyu; CN
WANG, Duxiang; CN
Priority Data:
201610267703.X27.04.2016CN
Title (EN) FLIP FOUR-JUNCTION SOLAR CELL STRUCTURE AND PREPARATION METHOD THEREFOR
(FR) STRUCTURE DE CELLULE SOLAIRE À QUATRE JONCTIONS RETOURNÉE ET SON PROCÉDÉ DE PRÉPARATION
(ZH) 一种倒装四结太阳能电池结构及其制备方法
Abstract:
(EN) Disclosed are a flip four-junction solar cell structure and a preparation method therefor. Firstly, a GaInP sub-cell and a GaAs sub-cell are formed on a GaAs substrate in sequence by means of MOCVD or an MBE, and then a SiGeSn sub-cell and a SiGe sub-cell are grown by means of UHVCVD. This cell structure has good current matching and lattice matching, and can achieve a high crystalline quality and cell efficiency.
(FR) L'invention concerne une structure de cellule solaire à quatre jonctions retournée et son procédé de préparation. Tout d'abord, une sous-cellule GaInP et une sous-cellule GaAs sont formées sur un substrat GaAs en séquence au moyen d'une technique MOCVD ou MBE, puis on fait croître une sous-cellule SiGeSn et une sous-cellule SiGe au moyen d'une technique UHVCVD. Cette structure de cellule présente une bonne adaptation de courant et un bon accord de maille, et permet d'obtenir une haute qualité cristalline et un haut rendement de cellule.
(ZH) 一种倒装四结太阳能电池结构及其制备方法,首先利用MOCVD或是MBE在GaAs衬底上依次形成GaInP子电池和GaAs子电池,然后再利用UHVCVD生长SiGeSn子电池和SiGe子电池。这种电池结构具有良好的电流匹配和晶格匹配,能获得高的晶体质量和电池效率。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)