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1. (WO2017182826) COUPLED QUANTUM DOT MEMRISTOR

Pub. No.:    WO/2017/182826    International Application No.:    PCT/GB2017/051122
Publication Date: Fri Oct 27 01:59:59 CEST 2017 International Filing Date: Sat Apr 22 01:59:59 CEST 2017
IPC: H01L 45/00
Applicants: OXFORD UNIVERSITY INNOVATION LIMITED
Inventors: LI, Ying
BENJAMIN, Simon
BRIGGS, George Andrew Davidson
MOL, Jan Andries
Title: COUPLED QUANTUM DOT MEMRISTOR
Abstract:
The present invention relates to novel memristive devices, uses thereof, and processes for their preparation. In a first aspect the invention provides a quantum memristor, comprising a first quantum dot (QD1 ) which is capacitively coupled to a second quantum dot (QD2), a source electrode, a drain electrode, and a bath electrode, wherein said source electrode and said drain electrode are coupled via quantum tunnelling to QD1 and said bath electrode is coupled via quantum tunnelling to QD2, and wherein QD2 is capacitively coupled to either the source electrode or the drain electrode.