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1. (WO2017179944) LIGHT-EMITTING DEVICE, LIGHT-EMITTING DEVICE PACKAGE, AND LIGHT-EMITTING MODULE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2017/179944    International Application No.:    PCT/KR2017/004065
Publication Date: 19.10.2017 International Filing Date: 14.04.2017
IPC:
H01L 25/075 (2006.01), H01L 27/15 (2006.01), A61N 5/06 (2006.01), H01L 33/48 (2010.01), H01L 33/64 (2010.01), F21Y 105/10 (2016.01), F21Y 115/10 (2016.01)
Applicants: LG INNOTEK CO., LTD. [KR/KR]; 98, Huam-ro Jung-gu Seoul 04637 (KR)
Inventors: KIM, Myung Hee; (KR).
HONG, Jung Yeop; (KR)
Agent: KIM, Ki Moon; (KR)
Priority Data:
10-2016-0046356 15.04.2016 KR
10-2016-0049327 22.04.2016 KR
Title (EN) LIGHT-EMITTING DEVICE, LIGHT-EMITTING DEVICE PACKAGE, AND LIGHT-EMITTING MODULE
(FR) DISPOSITIF ÉLECTROLUMINESCENT, BOÎTIER DE DISPOSITIF ÉLECTROLUMINESCENT ET MODULE ÉLECTROLUMINESCENT
(KO) 발광소자, 발광소자 패키지 및 발광모듈
Abstract: front page image
(EN)Disclosed in an embodiment are a light-emitting device, and a light-emitting device package and a light-emitting module having the same. According to the embodiment, the light-emitting device has: a first superlattice layer arranged on an AlN template layer, and a first semiconductor layer, a second superlattice layer, and a first conductive semiconductor layer; an active layer having a quantum well layer and a quantum wall layer arranged on the first conductive semiconductor layer; and an electron blocking layer arranged on the active layer and a second conductive semiconductor layer. A second layer of first and second layers of the first superlattice layer, the first semiconductor layer, and third and fourth layers of the second superlattice layer include AlGaN-based semiconductors, and an aluminum composition of the third layer is higher than an aluminum composition of the fourth layer and has the same composition range as that of an aluminum composition of the first semiconductor layer. The active layer emits ultraviolet light.
(FR)Selon un mode de réalisation, l'invention concerne un dispositif électroluminescent, et un boîtier de dispositif électroluminescent ainsi qu'un module électroluminescent le comportant. Selon le mode de réalisation, le dispositif électroluminescent comprend : une première couche de super-réseau disposée sur une couche modèle d'AlN, et une première couche de semi-conducteur, une seconde couche de super-réseau et une première couche de semi-conducteur conductrice; une couche active ayant une couche de puits quantique et une couche de paroi quantique agencée sur la première couche semi-conductrice conductrice; et une couche de blocage d'électrons agencée sur la couche active et une seconde couche semi-conductrice conductrice. Une seconde couche de première et seconde couches de la première couche de super-réseau, la première couche de semi-conducteur, et des troisième et quatrième couches de la seconde couche de super-réseau comprennent des semi-conducteurs à base d'AlGaN, et une composition d'aluminium de la troisième couche est plus élevée qu'une composition d'aluminium de la quatrième couche et a la même plage de composition que celle d'une composition d'aluminium de la première couche semi-conductrice. La couche active émet une lumière ultraviolette.
(KO)실시 예는 발광소자 및 이를 갖는 발광소자 패키지 및 발광 모듈이 개시된다. 실시 예에 따른 발광소자는 AlN 템플릿층 위에 배치된 제1 초격자층, 제1반도체층, 제2 초격자층, 제1도전형 반도체층이 배치되며, 상기 제1도전형 반도체층 위에 양자우물층 및 양자벽층을 갖는 활성층이 배치되며, 상기 활성층 위에 배치된 전자 블록킹층 및 제2도전형 반도체층이 배치된다. 상기 제1초격자층의 제1,2층 중 제2층, 상기 제1반도체층 및 상기 제2초격자층의 제3,4층은 AlGaN계 반도체를 포함하며, 상기 제3층의 알루미늄 조성은 상기 제4층의 알루미늄 조성보다 높고, 상기 제1반도체층의 알루미늄의 조성과 동일한 조성 범위를 가진다. 상기 활성층은 자외선 광을 방출한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)