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1. (WO2017179868) METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE INCLUDING SEMI-INSULATING NITRIDE SEMICONDUCTOR LAYER, AND NITRIDE SEMICONDUCTOR SUBSTRATE MANUFACTURED THEREBY
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Pub. No.:    WO/2017/179868    International Application No.:    PCT/KR2017/003867
Publication Date: 19.10.2017 International Filing Date: 10.04.2017
IPC:
H01L 21/02 (2006.01), H01L 21/322 (2006.01), H01L 21/324 (2006.01)
Applicants: LUMISTAL CO.,LTD [KR/KR]; 102-ho, Business Incubator, 237, Sangidaehak-ro, Siheung-si, Gyeonggi-do 15073 (KR)
Inventors: LEE, Hyun-Jae; (KR)
Agent: YANG, Jeong-Kun; (KR)
Priority Data:
10-2016-0045111 12.04.2016 KR
10-2016-0155386 22.11.2016 KR
10-2017-0040975 30.03.2017 KR
Title (EN) METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE INCLUDING SEMI-INSULATING NITRIDE SEMICONDUCTOR LAYER, AND NITRIDE SEMICONDUCTOR SUBSTRATE MANUFACTURED THEREBY
(FR) PROCÉDÉ DE FABRICATION DE SUBSTRAT SEMI-CONDUCTEUR AU NITRURE INCLUANT UNE COUCHE SEMI-CONDUCTRICE AU NITRURE SEMI-ISOLANTE, ET SUBSTRAT SEMI-CONDUCTEUR AU NITRURE AINSI FABRIQUÉ
(KO) 반절연 질화물 반도체층을 포함하는 질화물 반도체 기판 제조 방법 및 이에 의해 제조된 질화물 반도체 기판
Abstract: front page image
(EN)The present invention relates to a method for manufacturing a nitride semiconductor substrate including a semi-insulating nitride semiconductor layer, and a nitride semiconductor substrate manufactured thereby, and presents a manufacturing method for a nitride semiconductor substrate and a nitride semiconductor substrate manufactured thereby, the method forming an adjustment layer, which includes an acceptor-providing material, performing a heat treatment step, and then growing a nitride layer so as to diffuse, through an inter-diffusion effect, the acceptor-providing material within a nitride layer having a high donor doping concentration, thereby forming a semi-insulating nitride semiconductor layer of which a resistance characteristic is adjusted.
(FR)La présente invention porte sur un procédé de fabrication d'un substrat semi-conducteur au nitrure incluant une couche semi-conductrice au nitrure semi-isolante, et un substrat semi-conducteur au nitrure ainsi fabriqué, et présente un procédé de fabrication d'un substrat semi-conducteur au nitrure et un substrat semi-conducteur au nitrure ainsi fabriqué, le procédé formant une couche d'ajustement, laquelle inclut un matériau producteur d'accepteurs, mettant en œuvre une étape de traitement thermique, puis faisant croître une couche de nitrure afin de diffuser, par un effet d'interdiffusion, le matériau producteur d'accepteurs dans une couche de nitrure présentant une forte concentration de dopage de donneurs, formant ainsi une couche semi-conductrice au nitrure semi-isolante dont une caractéristique de résistance est ajustée.
(KO)본 발명은 반절연 질화물 반도체층을 포함하는 질화물 반도체 기판 제조 방법 및 이에 의해 제조된 질화물 반도체 기판에 대한 것으로서, 억셉터 제공 물질을 포함하는 조절층을 형성시키고 열처리 공정을 수행한 후 질화물층을 성장시킴으로써 상호확산(inter-diffusion) 효과를 통해 도너 도핑 농도가 높은 질화물층 내에 억셉터 제공 물질을 확산시켜 저항 특성이 조절된 반절연(Semi-insulating) 질화물 반도체층을 형성시키는 질화물 반도체 기판에 대한 제조 방법과 이를 통해 제조된 질화물 반도체 기판을 제시한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)