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1. (WO2017177983) ALARM CIRCUIT OF GAS-SENSITIVE SENSOR
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2017/177983    International Application No.:    PCT/CN2017/080805
Publication Date: 19.10.2017 International Filing Date: 17.04.2017
IPC:
G01N 27/12 (2006.01)
Applicants: INSTITUTE OF PROCESS ENGINEERING, CHINESE ACADEMY OF SCIENCES [CN/CN]; No. 1 Zhongguancun North Second Street Haidian District Beijing 100190 (CN)
Inventors: HAN, Ning; (CN).
WU, Xiaofeng; (CN).
CHEN, Yunfa; (CN)
Agent: BEYOND ATTORNEYS AT LAW; F6, Xijin Centre 39 Lianhuachi East Rd., Haidian District Beijing 100036 (CN)
Priority Data:
201610237530.7 15.04.2016 CN
Title (EN) ALARM CIRCUIT OF GAS-SENSITIVE SENSOR
(FR) CIRCUIT D'ALARME DE CAPTEUR SENSIBLE AU GAZ
(ZH) 气敏传感器报警电路
Abstract: front page image
(EN)A self-feedback circuit, comprising a gas-sensitive sensor and a voltage dividing circuit. The voltage dividing circuit comprises a field effect transistor (p-FET, n-FET). A gas-sensitive resistor (n-Rsensor) of the gas-sensitive sensor is in series connection with a source electrode (S) and a drain electrode (D) of the field effect transistor (p-FET, n-FET). An increased one between the divided voltage of the gas-sensitive resistor (n-Rsensor) and the divided voltage of the voltage dividing circuit is used as a voltage output (VOUT) of the self-feedback circuit.
(FR)L'invention concerne un circuit à rétroaction automatique comprenant un capteur sensible au gaz et un circuit de division de tension. Le circuit de division de tension comprend un transistor à effet de champ (p-FET, n-FET). Une résistance sensible au gaz (n-Rsensor) du capteur sensible au gaz est reliée en série avec une électrode de source (S) et une électrode de drain (D) du transistor à effet de champ (p-FET, n-FET). Une hausse de la tension divisée de la résistance sensible au gaz (n-Rsensor) ou de la tension divisée du circuit de division de tension est utilisée en tant que sortie de tension (VOUT) du circuit à rétroaction automatique.
(ZH)一种自反馈电路,包括气敏传感器和分压电路,其中,分压电路包括场效应晶体管(p-FET,n-FET),气敏传感器的气敏电阻(n-Rsensor)与场效应晶体管(p-FET,n-FET)的源极(S)和漏极(D)串联,取气敏电阻(n-Rsensor)的分压与分压电路的分压之中的分压增大者作为自反馈电路的电压输出(V OUT)。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)