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1. WO2017177618 - SENSOR AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE

Publication Number WO/2017/177618
Publication Date 19.10.2017
International Application No. PCT/CN2016/099579
International Filing Date 21.09.2016
IPC
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
G01L 9/08 2006.01
GPHYSICS
01MEASURING; TESTING
LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
9Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
08by making use of piezo-electric devices
CPC
G01L 9/08
GPHYSICS
01MEASURING; TESTING
LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
9Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements
08by making use of piezo-electric devices ; , i.e. electric circuits therefor
H01L 27/1214
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
H01L 27/124
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
124with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
H01L 27/1446
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
1446in a repetitive configuration
H01L 29/66742
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66742Thin film unipolar transistors
H01L 29/786
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
Applicants
  • 京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
  • KA图像 KA IMAGING INC. [CA]/[CA]
Inventors
  • 林家强 LIN, Chia Chiang
Agents
  • 北京市柳沈律师事务所 LIU, SHEN & ASSOCIATES
Priority Data
201610236910.915.04.2016CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) SENSOR AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE
(FR) CAPTEUR ET SON PROCÉDÉ DE FABRICATION, ET DISPOSITIF ÉLECTRONIQUE
(ZH) 传感器及其制造方法、电子设备
Abstract
(EN)
A sensor and a manufacturing method therefor, and an electronic device. The sensor (100) comprises: a base substrate (101); a thin film transistor (102) disposed on the base substrate and comprising a source (1025); a first insulating layer (106) disposed on the thin film transistor (102), and provided with a first via (1071) running through the first insulating layer (106); a conductive layer (1031) disposed in the first via (1071) and on part of the first insulating layer (106), and electrically connected to the source (1025) by means of the first via (1071); a biased electrode (1032) disposed on the first insulating layer (106) and separated from the conductive layer (1031); a sensing active layer (1033) separately connected to the conductive layer (1031) and the biased electrode (1032); and an auxiliary conductive layer (1034) disposed on the conductive layer (1031). By means of the sensor and the manufacturing method therefor, the auxiliary conductive layer (1034) is provided on the conductive layer without increasing working procedure, such that the conduction capability is improved and normal transmission of signals is ensured.
(FR)
L’invention concerne un capteur et son procédé de fabrication, et un dispositif électronique. Le capteur (100) comprend : un substrat de base (101) ; un transistor à couches minces (102) disposé sur le substrat de base et comprenant une source (1025) ; une première couche isolante (106) disposée sur le transistor à couches minces (102), et pourvue d'un premier trou d'interconnexion (1071) s'étendant à travers la première couche isolante (106) ; une couche conductrice (1031) disposée dans le premier trou d'interconnexion (1071) et sur une partie de la première couche isolante (106), et électriquement connectée à la source (1025) au moyen du premier trou d'interconnexion (1071) ; une électrode polarisée (1032) disposée sur la première couche isolante (106) et séparée de la couche conductrice (1031) ; une couche active de détection (1033) connectée séparément à la couche conductrice (1031) et à l'électrode polarisée (1032) ; et une couche conductrice auxiliaire (1034) disposée sur la couche conductrice (1031). Au moyen du capteur et de son procédé de fabrication, la couche conductrice auxiliaire (1034) est disposée sur la couche conductrice sans augmenter la procédure de travail, de telle sorte que la capacité de conduction est améliorée et qu'une transmission normale de signaux est assurée.
(ZH)
一种传感器及其制造方法、电子设备,该传感器(100)包括:衬底基板(101);薄膜晶体管(102),设置在所述衬底基板上,所述薄膜晶体管包括源极(1025);第一绝缘层(106),设置在所述薄膜晶体管(102)上,所述第一绝缘层(106)中设置有贯穿所述第一绝缘层(106)的第一过孔(1071);导电层(1031),设置于所述第一过孔(1071)中和部分所述第一绝缘层(106)上并通过所述第一过孔(1071)与所述源极(1025)电连接;偏压电极(1032),设置于所述第一绝缘层(106)上且与所述导电层(1031)分离;传感有源层(1033),分别与所述导电层(1031)和所述偏压电极(1032)连接;以及辅助导电层(1034),设置于所述导电层(1031)上。该传感器及其制造方法,在不增加工序的情况下,在导电层上设置辅助导电层(1034),提高了导通能力,保证信号的正常传输。
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