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1. (WO2017177554) CRYSTALLINE SILICON AND PREPARATION METHOD THEREFOR

Pub. No.:    WO/2017/177554    International Application No.:    PCT/CN2016/087567
Publication Date: Fri Oct 20 01:59:59 CEST 2017 International Filing Date: Thu Jun 30 01:59:59 CEST 2016
IPC: C30B 29/06
H01L 31/0288
Applicants: XI'AN LONGI SILICON MATERIALS CORP.
西安隆基硅材料股份有限公司
Inventors: DENG, Hao
邓浩
FU, Nannan
付楠楠
WANG, Xiangdong
王向东
Title: CRYSTALLINE SILICON AND PREPARATION METHOD THEREFOR
Abstract:
A crystalline silicon material, comprising silicon, gallium and a lanthanide rare earth element X, the concentration of the lanthanide rare earth element X being 1010-1016 atoms per cubic centimetre. A solar cell manufactured using the crystalline silicon aids electrical performance. Also provided is a preparation method for the crystalline silicon. The crystalline silicon material is doped with gallium to reduce light attenuation, boron is used to adjust the resistivity distribution, and yield and quality are improved. The doped lanthanide rare earth element X, via a down conversion effect, effectively increases the utilisation rate of the silicon material with regard to ultraviolet waveband light, and a solar cell made using the crystalline silicon significantly increases the conversion efficiency.