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1. (WO2017175902) REAR ELECTRODE PASTE COMPOSITION FOR SOLAR CELL
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2017/175902    International Application No.:    PCT/KR2016/003766
Publication Date: 12.10.2017 International Filing Date: 11.04.2016
IPC:
H01L 31/0224 (2006.01), H01L 31/0216 (2014.01), H01L 31/042 (2014.01), H01L 31/08 (2006.01)
Applicants: DAE JOO ELECTRONIC MATERIALS CO., LTD. [KR/KR]; 148, Seohaean-ro Siheung-si Gyeonggi-do 15094 (KR)
Inventors: LEE, Jin Kwon; (KR).
LEE, Seong Eun; (KR).
OH, Hyeong Rok; (KR).
KANG, Hyun Soo; (KR).
LIM, Jong Chan; (KR)
Agent: PLUS INTERNATIONAL IP LAW FIRM; 10F, 809, Hanbat-daero Seo-gu Daejeon 35209 (KR)
Priority Data:
10-2016-0042325 06.04.2016 KR
Title (EN) REAR ELECTRODE PASTE COMPOSITION FOR SOLAR CELL
(FR) COMPOSITION DE PÂTE D'ÉLECTRODE ARRIÈRE POUR CELLULE SOLAIRE
(KO) 태양전지용 후면전극 페이스트 조성물
Abstract: front page image
(EN)According to one embodiment of the present invention, a PERC-type solar cell comprises: a p-type silicon substrate including an n-type semiconductor layer on the front surface thereof; a p-type semiconductor layer; a front electrode electrically connected to the n-type semiconductor layer; and a rear electrode electrically connected to the silicon substrate. Here, a glass frit composition of a rear electrode paste comprises a copper oxide-silicon oxide (CuO-SiO2)-based compound. Since copper oxide (CuO) is combined with silicon oxide (SiO2), an adhesive force between the rear electrode and a solder ribbon can be improved without damaging a passivation layer.
(FR)Selon un mode de réalisation, la présente invention concerne une cellule solaire du type PERC qui comprend : un substrat en silicium du type p comprenant une couche semi-conductrice du type n sur sa surface avant; une couche semi-conductrice du type p; une électrode avant électriquement connectée à la couche semi-conductrice du type n; et une électrode arrière électriquement connectée au substrat en silicium. Dans l'invention, une composition de fritte de verre d'une pâte d'électrode arrière comprend un composé à base d'oxyde de cuivre-oxyde de silicium (CuO-SiO2). Étant donné que l'oxyde de cuivre (CuO) est combiné à de l'oxyde de silicium (SiO2), une force d'adhérence entre l'électrode arrière et un ruban de soudure peut être améliorée sans endommager une couche de passivation.
(KO)본 발명의 일 실시예에 따른 PERC형 태양전지는 전면에 n형 반도체층를 포함하는 p형 실리콘 기판; p형 반도체층, 상기 n형 반도체층에 전기적으로 연결되는 전면전극; 및 상기 실리콘 기판에 전기적으로 연결되는 후면전극을 포함한다. 여기서 후면전극 페이스트의 유리 프릿 조성물은 산화구리-산화규소계(CuO-SiO2) 화합물을 포함하는 것을 특징으로 한다. 상기 산화구리(CuO)는 상기 산화규소(SiO2)와의 조합으로 패시베이션층을 손상시키지 않으면서 후면전극과 솔더리본 간의 접착력을 향상시킬 수 있다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)