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1. (WO2017174603) SHORT CHANNEL TRENCH POWER MOSFET
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Pub. No.: WO/2017/174603 International Application No.: PCT/EP2017/058028
Publication Date: 12.10.2017 International Filing Date: 04.04.2017
IPC:
H01L 29/78 (2006.01) ,H01L 21/336 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
Applicants:
ABB SCHWEIZ AG [CH/CH]; Brown Boveri Strasse 6 5400 Baden, CH
Inventors:
MINAMISAWA, Renato; CH
KNOLL, Lars; CH
Agent:
ABB PATENT ATTORNEYS; Association 154, c/o ABB Schweiz AG, Intellectual Property CH-IP Brown Boveri Strasse 6 5400 Baden, CH
Priority Data:
16164303.607.04.2016EP
Title (EN) SHORT CHANNEL TRENCH POWER MOSFET
(FR) TRANSISTOR MOSFET DE PUISSANCE À TRANCHÉE À CANAL COURT
Abstract:
(EN) It is an object of the invention to provide a power semiconductor device having a low on-state resistance while avoiding any short channel effects and having a low subthreshold slope. To attain this object the invention provides a trench power semiconductor device, which comprises a compensation layer (15) of a first conductivity type, wherein the compensation layer (15) is extending on a gate insulation layer (11) between a source layer (5) of the first conductivity type and a substrate layer (9) of the first conductivity type directly adjacent to a channel region of a second conductivity type, and wherein: Lch > 4 √( crtcomptGI)). In the above inequation Lch is a channel length, εCR is a permittivity of the channel region, εGI is a permittivity of the gate insulation layer, tC0MP is a thickness of the compensation layer (15) and tGI is a thickness of the gate insulation layer (11).
(FR) Cette invention concerne un dispositif à semi-conducteur de puissance ayant une faible résistance à l'état passant tout en évitant tout effet de canal court et présentant une faible pente de sous-seuil. Plus précisément, l'invention concerne un dispositif à semi-conducteur de puissance en tranchée qui comprend une couche de compensation (15) d'un premier type de conductivité, la couche de compensation (15) s'étendant sur une couche d'isolation de grille (11) entre une couche de source (5) du premier type de conductivité et une couche de substrat (9) du premier type de conductivité directement adjacente à une région de canal d'un second type de conductivité, et dans lequel : Lch> 4 √( crtcomptGI)). Dans l'équation ci-dessus Lch est une longueur de canal, εCR est une constante diélectrique de la région de canal, εGI est une constante diélectrique de la couche d'isolation de grille, tCOMP est une épaisseur de la couche de compensation et tGI est une épaisseur de la couche d'isolation de grille (11).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)