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1. (WO2017173588) METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS
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Pub. No.:
WO/2017/173588
International Application No.:
PCT/CN2016/078510
Publication Date:
12.10.2017
International Filing Date:
06.04.2016
Chapter 2 Demand Filed:
09.08.2017
IPC:
H01L 21/67
(2006.01)
H
ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Applicants:
ACM RESEARCH (SHANGHAI) INC.
[CN/CN]; Bld. 4, No. 1690 Cailun Road, Zhangjiang High-tech Park Shanghai 201203 (CN)
Inventors:
WANG, Jun
; (CN).
WANG, Hui
; (CN).
CHEN, Fufa
; (CN).
CHEN, Fuping
; (CN).
WANG, Jian
; (CN).
WANG, Xi
; (CN).
ZHANG, Xiaoyan
; (CN).
JIN, Yinuo
; (CN).
JIA, Zhaowei
; (CN).
XIE, Liangzhi
; (CN).
LI, Xuejun
; (CN)
Agent:
SHANGHAI PATENT & TRADEMARK LAW OFFICE, LLC
; 435 Guiping Road Shanghai 200233 (CN)
Priority Data:
Title
(EN)
METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS
(FR)
PROCÉDÉS ET APPAREIL DE NETTOYAGE DE TRANCHES SEMI-CONDUCTRICES
Abstract:
(EN)
A method for cleaning semiconductor substrate (1010,2010) without damaging patterned structure on the semiconductor substrate (1010,2010) using ultra/mega sonic device (1003,2003) comprises applying liquid into a space between a substrate (1010,2010) and an ultra/mega sonic device (1003,2003); setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive the ultra/mega sonic device (1003,2003); before bubble cavitation in the liquid damaging patterned structure on the substrate (1010,2010), setting the ultra/mega sonic power supply at zero output;after temperature inside bubble cooling down to a set temperature, setting the ultra/mega sonic power supply at frequency f1 and power P1 again;detecting power on time at power P1 and frequency f1 and power off time separately or detecting amplitude of each waveform output by the ultra/mega sonic power supply;comparing the detected power on time with a preset time τ1, or comparing the detected power off time with a preset time τ2, or comparing detected amplitude of each waveform with a preset value, if the detected power on time is longer than the preset time τ1, or the detected power off time is shorter than the preset time τ2, or the detected amplitude of any waveform is larger than the preset value, shut down the ultra/mega sonic power supply and send out an alarm signal.
(FR)
L'invention concerne un procédé de nettoyage d'un substrat semi-conducteur (1010, 2010) sans endommagement de la structure à motifs sur le substrat semi-conducteur (1010, 2010) à l'aide d'un dispositif à ultra/méga-sons (1003, 2003) consistant : à appliquer un liquide dans un espace entre un substrat (1010, 2010) et un dispositif à ultra/méga-sons (1003, 2003); à régler une alimentation électrique à ultra/méga-sons sur une fréquence f1 et une puissance P1 afin de commander le dispositif à ultra/méga-sons (1003, 2003); avant que la cavitation à bulles dans le liquide n'endommage la structure à motifs sur le substrat (1010, 2010), à régler l'alimentation électrique à ultra/méga-sons sur une sortie nulle; une fois la température intérieure de bulle refroidie à une température établie, à régler à nouveau l'alimentation électrique à ultra/méga-sons sur la fréquence f1 et la puissance P1; à détecter un temps de mise sous tension à la puissance P1 et à la fréquence f1 et un temps de mise hors tension séparément ou à détecter l'amplitude de chaque sortie de forme d'onde par l'alimentation électrique à ultra/méga-sons; à comparer le temps de mise sous tension détecté à un temps prédéfini T1, ou à comparer le temps de mise hors tension détecté à un temps prédéfini T2, ou à comparer l'amplitude détectée de chaque forme d'onde à une valeur pré-établie, si le temps de mise sous tension détecté est plus long que le temps prédéfini T1, ou le temps de mise hors tension détecté est plus court que le temps prédéfini T2, ou l'amplitude détectée de toute forme d'onde est supérieure à la valeur pré-établie, arrêter l'alimentation électrique à ultra/méga-sons et envoyer un signal d'alarme.
Designated States:
AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language:
English (
EN
)
Filing Language:
English (
EN
)