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1. (WO2017172536) CONTROLLING DRY ETCH PROCESS CHARACTERISTICS USING WAFERLESS DRY CLEAN OPTICAL EMISSION SPECTROSCOPY
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Pub. No.: WO/2017/172536 International Application No.: PCT/US2017/024138
Publication Date: 05.10.2017 International Filing Date: 24.03.2017
IPC:
H01L 21/3065 (2006.01) ,H01L 21/66 (2006.01) ,H01L 21/02 (2006.01) ,H01L 21/67 (2006.01) ,H05H 1/46 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66
Testing or measuring during manufacture or treatment
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
46
using applied electromagnetic fields, e.g. high frequency or microwave energy
Applicants:
TOKYO ELECTRON LIMITED [JP/JP]; Akasaka Biz Tower 3-1 Akasaka 5-chome Minato-ku, Tokyo 107-6325, JP
TOKYO ELECTRON U.S. HOLDINGS, INC. [US/US]; 2400 Grove Boulevard Austin, Texas 78741, US (JP)
Inventors:
COPPA, Brian J.; US
VEDHACHALAM, Deepak; US
DASSAPA, Francois C.; US
Agent:
MITROVIC, Andrej; US
Priority Data:
62/316,02131.03.2016US
Title (EN) CONTROLLING DRY ETCH PROCESS CHARACTERISTICS USING WAFERLESS DRY CLEAN OPTICAL EMISSION SPECTROSCOPY
(FR) COMMANDE DE CARACTÉRISTIQUES DE PROCESSUS DE GRAVURE À SEC À L'AIDE D'UNE SPECTROSCOPIE À ÉMISSION OPTIQUE DE NETTOYAGE À SEC SANS TRANCHE
Abstract:
(EN) Described herein are architectures, platforms and methods for acquiring optical emission spectra from an optical emission spectroscopy system by flowing a dry cleaning gas into a plasma processing chamber of the plasma processing system and igniting a plasma in the plasma processing chamber to initiate the waferless dry cleaning process.
(FR) La présente invention concerne des architectures, des plateformes et des procédés pour acquérir des spectres d'émission optique à partir d'un système de spectroscopie à émission optique par écoulement d'un gaz de nettoyage à sec dans une chambre de traitement au plasma du système de traitement au plasma et par allumage d'un plasma dans la chambre de traitement au plasma pour déclencher le processus de nettoyage à sec sans tranche.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)