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1. (WO2017172283) MANAGING THRESHOLD VOLTAGE SHIFT IN NONVOLATILE MEMORY

Pub. No.:    WO/2017/172283    International Application No.:    PCT/US2017/020989
Publication Date: Fri Oct 06 01:59:59 CEST 2017 International Filing Date: Tue Mar 07 00:59:59 CET 2017
IPC: G06F 13/16
Applicants: INTEL CORPORATION
Inventors: QAWAMI, Shekoufeh
SUNDARAM, Rajesh
DAMLE, Prashant S.
RIVERS, Doyle
WALKER, Julie M.
Title: MANAGING THRESHOLD VOLTAGE SHIFT IN NONVOLATILE MEMORY
Abstract:
Apparatus, systems, and methods to correct for threshold voltage drift in non- volatile memory devices are disclosed and described. In one example, a compensated demarcation voltage is generated by either a time-based drift compensation scheme or a disturb-based drift compensation scheme, and read and write operations to the non- volatile memory are carried out using the compensated voltage threshold.