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1. (WO2017172150) WORDLINE ADJUSTMENT SCHEME

Pub. No.:    WO/2017/172150    International Application No.:    PCT/US2017/019488
Publication Date: Fri Oct 06 01:59:59 CEST 2017 International Filing Date: Sat Feb 25 00:59:59 CET 2017
IPC: G11C 8/08
G11C 11/413
G11C 11/418
Applicants: QUALCOMM INCORPORATED
Inventors: SAHU, Rahul
GUPTA, Sharad Kumar
Title: WORDLINE ADJUSTMENT SCHEME
Abstract:
A memory and a method for operating a memory are provided. The memory includes a memory cell having a transistor and a wordline driver outputting a wordline coupled to the memory cell. The wordline driver adjusts a voltage level of the wordline to compensate for a parameter of the transistor. The method includes asserting a wordline voltage to access a memory cell having a transistor and adjusting the wordline voltage to compensate for a parameter of the transistor. Another memory is provided. The memory includes a memory cell and a wordline driver outputting a wordline coupled to the memory cell. The wordline driver adjusts a voltage level of the wordline based on a feedback of the wordline.