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1. (WO2017171969) THREE DIMENSIONAL STORAGE CELL ARRAY WITH HIGHLY DENSE AND SCALABLE WORD LINE DESIGN APPROACH

Pub. No.:    WO/2017/171969    International Application No.:    PCT/US2017/013044
Publication Date: Fri Oct 06 01:59:59 CEST 2017 International Filing Date: Thu Jan 12 00:59:59 CET 2017
IPC: H01L 27/11578
H01L 27/11575
H01L 27/1157
H01L 27/11551
H01L 27/11548
H01L 27/11524
H01L 27/11597
H01L 27/11595
H01L 27/24
Applicants: INTEL CORPORATION
Inventors: THIMMEGOWDA, Deepak
YIP, Aaron
HELM, Mark
LI, Yongna
Title: THREE DIMENSIONAL STORAGE CELL ARRAY WITH HIGHLY DENSE AND SCALABLE WORD LINE DESIGN APPROACH
Abstract:
An apparatus is described. The apparatus includes a three dimensional storage cell array structure. The apparatus also includes a staircase structure having alternating conductive and dielectric layers, wherein respective word lines are formed in the conductive layers. The word lines are connected to respective storage cells within the three dimensional storage cell array structure. The apparatus also includes upper word lines above the staircase structure that are connected to first vias that connect to respective steps of the staircase structure. The upper word lines are also connected to second vias that run vertically off a side of the staircase structure other than a side opposite the three dimensional storage cell array structure. The second vias are connected to respective word line driver transistors that are disposed beneath the staircase structure.