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1. (WO2017171846) POLARIZATION GATE STACK SRAM
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2017/171846    International Application No.:    PCT/US2016/025606
Publication Date: 05.10.2017 International Filing Date: 01.04.2016
IPC:
G11C 11/412 (2006.01), G11C 11/413 (2006.01)
Applicants: INTEL CORPORATION [US/US]; 2200 Mission College Blvd. Santa Clara, California 95054 (US)
Inventors: MORRIS, Daniel H.; (US).
AVCI, Uygar E.; (US).
YOUNG, Ian A.; (US)
Agent: PFLEGER, Edmund P.; (US)
Priority Data:
Title (EN) POLARIZATION GATE STACK SRAM
(FR) SRAM À EMPILEMENT DE GRILLES DE POLARISATION
Abstract: front page image
(EN)One embodiment provides an apparatus. The apparatus includes a first inverter comprising a first pull up transistor and a first pull down transistor; a second inverter cross coupled to the first inverter, the second inverter comprising a second pull up transistor and a second pull down transistor; a first access transistor coupled to the first inverter; and a second access transistor coupled to the second inverter. A gate electrode of one transistor of each inverter comprises a polarization layer.
(FR)Un mode de réalisation de l'invention concerne un appareil. L'appareil comprend : un premier inverseur comprenant un premier transistor d'excursion haute et un premier transistor d'excursion basse; un second inverseur couplé de façon transversale au premier inverseur, le second inverseur comprenant un second transistor d'excursion haute et un second transistor d'excursion basse; un premier transistor d'accès couplé au premier inverseur; et un second transistor d'accès couplé au second inverseur. Une électrode de grille d'un transistor de chaque inverseur comprend une couche de polarisation.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)