Search International and National Patent Collections

1. (WO2017171815) IN-SITU TRANSISTOR RECOVERY SYSTEMS AND METHODS

Pub. No.:    WO/2017/171815    International Application No.:    PCT/US2016/025413
Publication Date: Fri Oct 06 01:59:59 CEST 2017 International Filing Date: Fri Apr 01 01:59:59 CEST 2016
IPC: H01L 21/00
H01L 21/336
H01L 21/67
Applicants: INTEL CORPORATION
Inventors: SAUCIUC, Ioan
KWASNICK, Robert, F.
PULLEN, David, H.
Title: IN-SITU TRANSISTOR RECOVERY SYSTEMS AND METHODS
Abstract:
An embodiment includes a method comprising: determining the system, which includes a hardware processor comprising a transistor, is operating in a first system power state; determining the transistor is operating in a first transistor power state; and in response to determining the first system and first transistor power states, elevating a temperature of the transistor for a predetermined period of time. Other embodiments are described herein.