WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2017171739) TRANSISTOR GATE-CHANNEL ARRANGEMENTS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/171739 International Application No.: PCT/US2016/024828
Publication Date: 05.10.2017 International Filing Date: 30.03.2016
IPC:
H01L 29/786 (2006.01) ,H01L 21/336 (2006.01)
Applicants: INTEL CORPORATION[US/US]; 2200 Mission College Boulevard Santa Clara, California 95054-1549, US
Inventors: DEWEY, Gilbert W.; US
RIOS, Rafael; US
SHIVARAMAN, Shriram; US
RADOSAVLJEVIC, Marko; US
MILLARD, Kent E.; US
FRENCH, Marc C.; US
LE, Van H.; US
Agent: ZAGER, Laura A.; US
Priority Data:
Title (EN) TRANSISTOR GATE-CHANNEL ARRANGEMENTS
(FR) AGENCEMENTS GRILLE-CANAL DE TRANSISTOR
Abstract: front page image
(EN) Disclosed herein are transistor gate-channel arrangements, and related methods and devices. For example, in some embodiments, a transistor gate-channel arrangement may include a channel material and a transistor gate stack. The transistor gate stack may include a gate electrode material, a high-k dielectric disposed between the gate electrode material and the channel material, and indium gallium zinc oxide (IGZO) disposed between the high-k dielectric material and the channel material.
(FR) L'invention concerne des agencements grille-canal de transistor, et des procédés et des dispositifs associés. Par exemple, dans certains modes de réalisation, un agencement grille-canal de transistor peut comprendre un matériau de canal et un empilement de grille de transistor. L'empilement de grille de transistor peut comprendre un matériau d'électrode de grille, un diélectrique à constante diélectrique élevée disposé entre le matériau d'électrode de grille et le matériau de canal, et de l'oxyde d'indium-gallium-zinc (IGZO) disposé entre le matériau diélectrique à constante diélectrique élevée et le matériau de canal.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)