US2016024810 NANOWIRE FOR TRANSISTOR INTEGRATION

1. (WO2017171736) NANOWIRE FOR TRANSISTOR INTEGRATION

National Phase

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Latest bibliographic data on file with the International Bureau ⇨ Submit observation

Pub. No.:		WO/2017/171736		International Application No.:		PCT/US2016/024810
Publication Date:		05.10.2017		International Filing Date:		30.03.2016

IPC:

H01L 21/336 (2006.01), H01L 29/78 (2006.01)

Applicants:

INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054-1549 (US)

Inventors:

GLASS, Glenn A.; (US).
MOHAPATRA, Chandra S.; (US).
MURTHY, Anand S.; (US).
JAMBUNATHAN, Karthik; (US)

Agent:

PEMBERTON, John D.; (US)

Priority Data:

Title

(EN) NANOWIRE FOR TRANSISTOR INTEGRATION
(FR) NANOFIL POUR INTÉGRATION DE TRANSISTOR

Abstract:

(EN)Particular embodiments described herein provide for an electronic device that can include a nanowire channel. The nanowire channel can include nanowires and the nanowires can be about fifteen (15) or less angstroms apart. The nanowire channel can include more than ten (10) nanowires and can be created from a MXene material.
(FR)Des modes de réalisation particuliers de l'invention concernent un dispositif électronique qui peut comprendre un canal de nanofil. Le canal de nanofil peut comprendre des nanofils et les nanofils peuvent être espacés d'une distance inférieure ou égale à environ quinze (15) angströms. Le canal de nanofil peut comprendre plus de dix (10) nanofils et peut être créé à partir d'un matériau MXène.

Designated States:

AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).

Publication Language:	English (EN)
Filing Language:	English (EN)

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