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|1. (WO2017171232) METHOD FOR ANALYZING MONOCRYSTALLINE SILICON WAFER AND WAFER MANUFACTURED THEREBY|
|Applicants:||SK SILTRON CO., LTD.
|Inventors:||LEE, Jae Hyeong
PARK, Sang Soo
HONG, Se Jun
|Title:||METHOD FOR ANALYZING MONOCRYSTALLINE SILICON WAFER AND WAFER MANUFACTURED THEREBY|
A method for analyzing a monocrystalline silicon wafer of an embodiment comprises the steps of: heat-treating a monocrystalline silicon wafer to be analyzed; obtaining the cumulative distribution of oxygen precipitation nuclei density included in the heat-treated monocrystalline silicon wafer by temperature; obtaining a characteristic temperature at which a rate of generation of oxygen precipitation nuclei is maximized, using cumulative distribution; and identifying the type of point defects included in the monocrystalline silicon wafer by using the characteristic temperature.