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1. (WO2017171232) METHOD FOR ANALYZING MONOCRYSTALLINE SILICON WAFER AND WAFER MANUFACTURED THEREBY

Pub. No.:    WO/2017/171232    International Application No.:    PCT/KR2017/001622
Publication Date: Fri Oct 06 01:59:59 CEST 2017 International Filing Date: Thu Feb 16 00:59:59 CET 2017
IPC: H01L 21/66
H01L 21/02
H01L 21/324
C30B 15/20
Applicants: SK SILTRON CO., LTD.
에스케이실트론 주식회사
Inventors: LEE, Jae Hyeong
이재형
PARK, Sang Soo
박상수
HONG, Se Jun
홍세준
Title: METHOD FOR ANALYZING MONOCRYSTALLINE SILICON WAFER AND WAFER MANUFACTURED THEREBY
Abstract:
A method for analyzing a monocrystalline silicon wafer of an embodiment comprises the steps of: heat-treating a monocrystalline silicon wafer to be analyzed; obtaining the cumulative distribution of oxygen precipitation nuclei density included in the heat-treated monocrystalline silicon wafer by temperature; obtaining a characteristic temperature at which a rate of generation of oxygen precipitation nuclei is maximized, using cumulative distribution; and identifying the type of point defects included in the monocrystalline silicon wafer by using the characteristic temperature.