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1. (WO2017170219) ACTIVE MATRIX SUBSTRATE, MANUFACTURING METHOD THEREFOR AND DISPLAY DEVICE
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Pub. No.: WO/2017/170219 International Application No.: PCT/JP2017/011997
Publication Date: 05.10.2017 International Filing Date: 24.03.2017
IPC:
G09F 9/30 (2006.01) ,G02F 1/1345 (2006.01) ,G02F 1/1368 (2006.01) ,G09F 9/00 (2006.01) ,H01L 29/786 (2006.01)
G PHYSICS
09
EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
F
DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9
Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
30
in which the desired character or characters are formed by combining individual elements
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
1333
Constructional arrangements
1345
Conductors connecting electrodes to cell terminals
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136
Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362
Active matrix addressed cells
1368
in which the switching element is a three-electrode device
G PHYSICS
09
EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
F
DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9
Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
Applicants:
シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 大阪府堺市堺区匠町1番地 1, Takumi-cho, Sakai-ku, Sakai City, Osaka 5908522, JP
Inventors:
岡部 達 OKABE, Tohru; --
錦 博彦 NISHIKI, Hirohiko; --
中島 伸二 NAKAJIMA, Shinji; --
石田 和泉 ISHIDA, Izumi; --
村重 正悟 MURASHIGE, Shogo; --
Agent:
島田 明宏 SHIMADA, Akihiro; JP
川原 健児 KAWAHARA, Kenji; JP
奥田 邦廣 OKUDA, Kunihiro; JP
河本 悟 KAWAMOTO, Satoru; JP
Priority Data:
2016-07080231.03.2016JP
Title (EN) ACTIVE MATRIX SUBSTRATE, MANUFACTURING METHOD THEREFOR AND DISPLAY DEVICE
(FR) SUBSTRAT DE MATRICE ACTIVE, SON PROCÉDÉ DE FABRICATION ET DISPOSITIF D'AFFICHAGE
(JA) アクティブマトリクス基板、その製造方法および表示装置
Abstract:
(EN) The present invention provides an active matrix substrate that makes it possible to suppress the occurrence of electrostatic discharge in a manufacturing process of a display panel, and hold down a manufacturing cost, a manufacturing method therefor, and a display device. After a passivation film for protecting a TFT is formed in a state where an IGZO film is sandwiched between a silicon oxide film constituting a gate insulating film and an etching stop layer, annealing is performed at 200-350°C. Consequently, the passivation film is annealed, and the IGZO film is changed from a conductor to a semiconductor. As a result, not only the occurrence of ESD can be suppressed, but also the need for separating an electrostatic discharge prevention circuit from a display panel is eliminated, thereby enabling a reduction in the manufacturing cost of a display device.
(FR) La présente invention concerne un substrat de matrice active qui permet de supprimer l'apparition d'une décharge électrostatique dans un processus de fabrication d'un panneau d'affichage, et de maintenir un faible coût de fabrication, un procédé de fabrication associé, et un dispositif d'affichage. Après qu'un film de passivation destiné à protéger un TFT est formé dans un état dans lequel un film IGZO est pris en sandwich entre un film d'oxyde de silicium constituant un film d'isolation de grille et une couche d'arrêt de gravure, un recuit est effectué à 200-350 °C. Par conséquent, le film de passivation est recuit, et le film IGZO est changé d'un conducteur en un semi-conducteur. En conséquence, non seulement l'occurrence d'une ESD peut être supprimée, mais également le besoin de séparer un circuit de prévention de décharge électrostatique d'un panneau d'affichage, permettant ainsi une réduction du coût de fabrication d'un dispositif d'affichage.
(JA) 表示パネルの製造工程において静電気放電の発生を抑制すると共に、製造コストの抑制が可能なアクティブマトリクス基板、その製造方法および表示装置を提供する。 IGZO膜がゲート絶縁膜を構成する酸化シリコン膜とエッチングストップ層によって挟まれた状態で、TFTを保護するためのパッシベーション膜の形成後に、200~350℃でアニールを行う。これによって、パッシベーション膜のアニールを行うと共に、IGZO膜を導体から半導体に変化させる。その結果、ESDの発生を抑制することができるだけでなく、表示パネルから静電気放電防止回路を切り離すことが不要になるので、表示装置の製造コストを低減することができる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)