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1. (WO2017169883) SOLID-STATE IMAGING ELEMENT AND ELECTRONIC DEVICE

Pub. No.:    WO/2017/169883    International Application No.:    PCT/JP2017/010864
Publication Date: Fri Oct 06 01:59:59 CEST 2017 International Filing Date: Sat Mar 18 00:59:59 CET 2017
IPC: H01L 27/146
H04N 5/359
H04N 5/369
H04N 5/374
Applicants: SONY CORPORATION
ソニー株式会社
Inventors: WATANABE Taiichiro
渡部 泰一郎
KOGA Fumihiko
古閑 史彦
Title: SOLID-STATE IMAGING ELEMENT AND ELECTRONIC DEVICE
Abstract:
The present disclosure relates to a solid-state imaging element with which it is possible to keep OPB pixels from being affected even when blooming occurs with aperture pixels, and to an electronic device. A solid-state imaging element, which is one aspect of the present disclosure, in which a first photoelectric conversion unit for performing photoelectric conversion that performs photoelectric conversion in correspondence to incident light, and an upper electrode and a lower electrode formed so as to sandwich the first photoelectric conversion unit are formed on the outside of a substrate, wherein the solid-state imaging element is provided with aperture pixels for generating regular pixel signals, the aperture pixels being arranged on a pixel array; OPB pixels for generating pixel signals representing the dark current component, the OPB pixels being arranged on the edge of the pixel array; and a charge discharger for discharging the charge that flows out from the aperture pixels, the charge discharger being arranged between the aperture pixels and the OPB pixels. The present disclosure can be used for a back surface irradiation-type vertical spectral-type CMOS image sensor.