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1. (WO2017169833) TREATMENT LIQUID FOR SEMICONDUCTOR PRODUCTION, METHOD FOR PRODUCING SAME, PATTERN FORMATION METHOD, AND METHOD FOR PRODUCING ELECTRONIC DEVICE

Pub. No.:    WO/2017/169833    International Application No.:    PCT/JP2017/010619
Publication Date: Fri Oct 06 01:59:59 CEST 2017 International Filing Date: Fri Mar 17 00:59:59 CET 2017
IPC: G03F 7/32
G03F 7/16
G03F 7/42
H01L 21/027
H01L 21/304
Applicants: FUJIFILM CORPORATION
富士フイルム株式会社
Inventors: KAMIMURA, Tetsuya
上村 哲也
Title: TREATMENT LIQUID FOR SEMICONDUCTOR PRODUCTION, METHOD FOR PRODUCING SAME, PATTERN FORMATION METHOD, AND METHOD FOR PRODUCING ELECTRONIC DEVICE
Abstract:
An object of the present invention is to provide a treatment liquid for semiconductor production that enables the production of a fine resist pattern or fine semiconductor element wherein a deterioration in lithography performance and the occurrence of defects are suppressed. A treatment liquid for semiconductor production according to an embodiment of the present invention contains one type of compound (A) that satisfies requirement (a), one or more types of compound (B) that satisfies requirement (b), and one or more types of inorganic substance (C) that contains any element selected from Al, B, S, N, and K. Herein, the total content of compound (B) is 10-10-0.1 mass%, and the ratio P between compound (B) and inorganic substance (C) as represented by formula I is 103-10-6. Requirement (a): a compound selected from an alcohol compound, ketone compound, and ester compound, the content of which is 90.0-99.9999999 mass%. Requirement (b): a compound selected from an alcohol compound, ketone compound, ester compound, ether compound, and aldehyde compound having a carbon number of 6 or more, of which the content is 10-11-0.1 mass%. (Formula I) P = [total mass of inorganic substance (C)]/[total mass of compound (B)]