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1. (WO2017169645) HIGH-FREQUENCY SIGNAL AMPLIFYING CIRCUIT, POWER AMPLIFYING MODULE, FRONT-END CIRCUIT AND COMMUNICATION DEVICE
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Pub. No.: WO/2017/169645 International Application No.: PCT/JP2017/009630
Publication Date: 05.10.2017 International Filing Date: 09.03.2017
IPC:
H03F 3/24 (2006.01) ,H03F 1/12 (2006.01) ,H03F 3/19 (2006.01) ,H04B 1/525 (2015.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
F
AMPLIFIERS
3
Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
20
Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
24
of transmitter output stages
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
F
AMPLIFIERS
1
Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
08
Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
12
by use of attenuating means
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
F
AMPLIFIERS
3
Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
189
High-frequency amplifiers, e.g. radio frequency amplifiers
19
with semiconductor devices only
[IPC code unknown for H04B 1/525]
Applicants: MURATA MANUFACTURING CO., LTD.[JP/JP]; 10-1, Higashikotari 1-chome, Nagaokakyo-shi, Kyoto 6178555, JP
Inventors: NAKAJIMA, Reiji; JP
OBIYA, Hidenori; JP
Agent: YOSHIKAWA, Shuichi; JP
SOBAJIMA, Masaaki; JP
Priority Data:
2016-06926830.03.2016JP
Title (EN) HIGH-FREQUENCY SIGNAL AMPLIFYING CIRCUIT, POWER AMPLIFYING MODULE, FRONT-END CIRCUIT AND COMMUNICATION DEVICE
(FR) CIRCUIT D'AMPLIFICATION DE SIGNAL HAUTE FRÉQUENCE, MODULE D'AMPLIFICATION DE PUISSANCE, CIRCUIT FRONTAL ET DISPOSITIF DE COMMUNICATION
(JA) 高周波信号増幅回路、電力増幅モジュール、フロントエンド回路および通信装置
Abstract:
(EN) This high-frequency signal amplifying circuit is used in a front-end circuit (1) for propagating a high-frequency transmission signal and a high-frequency reception signal, and is provided with: an amplifying transistor (17) which amplifies the high-frequency transmission signal; a bias circuit (13) which provides a bias to a signal input terminal of the amplifying transistor (17); a resistor (15), one end of which is connected to the bias circuit (13) and the other end of which is connected to the signal input terminal; and an LC series resonant circuit (14), one end of which is connected to a connection node n1 between the resistor (15) and the signal input terminal, and the other end of which is connected to a ground terminal, wherein a resonant frequency fr of the LC series resonant circuit (14) is included in a difference frequency band between the high-frequency transmission signal and the high-frequency reception signal.
(FR) L'invention concerne un circuit d'amplification de signal haute fréquence qui est utilisé dans un circuit frontal (1) afin de propager un signal d'émission haute fréquence et un signal de réception haute fréquence, et comporte : un transistor d'amplification (17) qui amplifie le signal d'émission haute fréquence; un circuit de polarisation (13) qui fournit une polarisation à une borne d'entrée de signal du transistor d'amplification (17); une résistance (15), dont une extrémité est connectée au circuit de polarisation (13) et l'autre extrémité est connectée à la borne d'entrée de signal; et un circuit à résonance série LC (14), dont une extrémité est connectée à un nœud de connexion (n1) entre la résistance (15) et la borne d'entrée de signal, et l'autre extrémité est connectée à une borne de masse, une fréquence de résonance (fr) du circuit à résonance série LC (14) étant comprise dans une bande de fréquence de différence entre le signal d'émission haute fréquence et le signal de réception haute fréquence.
(JA) 高周波信号増幅回路は、高周波送信信号と高周波受信信号とを伝搬させるフロントエンド回路(1)に使用され、高周波送信信号を増幅する増幅トランジスタ(17)と、増幅トランジスタ(17)の信号入力端にバイアスを供給するバイアス回路(13)と、一端がバイアス回路(13)に接続され、他端が信号入力端に接続された抵抗(15)と、一端が抵抗(15)と信号入力端との接続ノードn1に接続され、他端が接地端子に接続されたLC直列共振回路(14)と、を備え、LC直列共振回路(14)の共振周波数frは、高周波送信信号と高周波受信信号との差周波数帯に含まれる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)