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1. (WO2017169587) MASK BLANK, METHOD FOR MANUFACTURING MASK BLANK, METHOD FOR MANUFACTURING TRANSFER MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2017/169587    International Application No.:    PCT/JP2017/009201
Publication Date: Fri Oct 06 01:59:59 CEST 2017 International Filing Date: Thu Mar 09 00:59:59 CET 2017
IPC: G03F 1/54
G03F 1/26
G03F 1/84
Applicants: HOYA CORPORATION
HOYA株式会社
Inventors: KOMINATO, Atsushi
小湊 淳志
SUZUKI, Toshiyuki
鈴木 寿幸
Title: MASK BLANK, METHOD FOR MANUFACTURING MASK BLANK, METHOD FOR MANUFACTURING TRANSFER MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Abstract:
The purpose of the present invention is to provide a mask blank for manufacturing a transfer mask wherein a thin film has high chemical resistance and film loss is minimized. The mask blank is characterized in that: the thin film (2) comprises a material containing metal, silicon and nitrogen; the ratio of metal content[atom%] to the total content [atom%] of metal and silicon in the thin film (2) is less than or equal to 15%; and when the depth direction distribution of the secondary ion intensity of silicon is acquired by analyzing the thin film using secondary ion mass spectrometry, the ratio of the maximum peak [counts/sec] of the secondary ion intensity of silicon in the surface region of the thin film (2) on the side opposite from a translucent substrate (1) to the average value [counts/sec] of the secondary ion intensity of silicon in the depth direction in the inner region of the thin film (2) excluding the surface region and the region near the boundary surface of the translucent substrate (1) is less than or equal to 1.6.