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1. (WO2017168736) SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

Pub. No.:    WO/2017/168736    International Application No.:    PCT/JP2016/060860
Publication Date: Fri Oct 06 01:59:59 CEST 2017 International Filing Date: Fri Apr 01 01:59:59 CEST 2016
IPC: H01L 29/78
H01L 29/41
H01L 29/739
H01L 29/861
H01L 29/868
H01L 29/872
Applicants: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
新電元工業株式会社
Inventors: KITADA, Mizue
北田 瑞枝
ASADA, Takeshi
浅田 毅
YAMAGUCHI, Takeshi
山口 武司
SUZUKI, Noriaki
鈴木 教章
ARAI, Daisuke
新井 大輔
Title: SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
Abstract:
This semiconductor device 100 comprising: a semiconductor base 110 having a second semiconductor layer 114 laminated upon a first semiconductor layer 112, having a trench 118 formed in the surface of the second semiconductor layer 114, and having a third semiconductor layer 116 comprising an epitaxial layer, formed inside the trench 118; a first electrode 126; a interlayer insulating film 122 having a prescribed opening 128; and a second electrode 124. Metal is filled inside the opening 128 and the opening 128 is positioned at a position away from the center of the third semiconductor layer 116 in the planar view. The second electrode 124 is connected to at least the third semiconductor layer 116 via the metal filled inside the opening 128. As a result, a semiconductor device is provided that: comprises the semiconductor base 110 having the third conductor layer 116 comprising the epitaxial layer, formed inside the trench 118; and is unlikely to undergo a reduction in voltage resistance resulting from a reach-through breakdown.