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|1. (WO2017168736) SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE|
|Applicants:||SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
|Title:||SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE|
This semiconductor device 100 comprising: a semiconductor base 110 having a second semiconductor layer 114 laminated upon a first semiconductor layer 112, having a trench 118 formed in the surface of the second semiconductor layer 114, and having a third semiconductor layer 116 comprising an epitaxial layer, formed inside the trench 118; a first electrode 126; a interlayer insulating film 122 having a prescribed opening 128; and a second electrode 124. Metal is filled inside the opening 128 and the opening 128 is positioned at a position away from the center of the third semiconductor layer 116 in the planar view. The second electrode 124 is connected to at least the third semiconductor layer 116 via the metal filled inside the opening 128. As a result, a semiconductor device is provided that: comprises the semiconductor base 110 having the third conductor layer 116 comprising the epitaxial layer, formed inside the trench 118; and is unlikely to undergo a reduction in voltage resistance resulting from a reach-through breakdown.