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|1. (WO2017168513) SUBSTRATE PROCESSING DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND RECORDING MEDIUM|
|Applicants:||KOKUSAI ELECTRIC CORPORATION
|Title:||SUBSTRATE PROCESSING DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND RECORDING MEDIUM|
[Problem] To provide a technique to improve inter-plane uniformity. [Solution] A substrate processing device is provided with: a processing chamber that internally houses a substrate holding tool for holding a plurality of substrates in a multistage manner and processes the substrates; a supply buffer portion that is adjacent to the processing chamber; a material gas supply portion placed inside the supply buffer portion; and a reactive gas supply portion placed inside the supply buffer portion. The material gas supply portion is configured so as to supply a material gas into the supply buffer portion from a position lower than or equal to the height of the substrate placed at the lowest stage of the substrate holding tool.