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1. (WO2017167923) SEMICONDUCTOR ON INSULATOR SUBSTRATE FOR RF APPLICATIONS
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Pub. No.: WO/2017/167923 International Application No.: PCT/EP2017/057614
Publication Date: 05.10.2017 International Filing Date: 30.03.2017
IPC:
H01L 21/762 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
76
Making of isolation regions between components
762
Dielectric regions
Applicants: SOITEC[FR/FR]; Parc Technologique des Fontaines Chemin Des Franques 38190 Bernin, FR
Inventors: CASTEX, Arnaud; FR
KONONCHUK, Oleg; FR
Agent: GRÜNECKER PATENT- UND RECHTSANWÄLTE PARTGMBB; Leopoldstrasse 4 80802 München, DE
Priority Data:
165278231.03.2016FR
Title (EN) SEMICONDUCTOR ON INSULATOR SUBSTRATE FOR RF APPLICATIONS
(FR) SUBSTRAT SEMI-CONDUCTEUR SUR ISOLANT POUR APPLICATIONS RF
Abstract:
(EN) The invention relates to a semiconductor on insulator substrate (1) for use in RF applications, in particular a silicon on insulator substrate, comprising a semiconductor top layer (11), a buried oxide layer (9) and a passivation layer (7) over a silicon support substrate (3) and a corresponding method. The invention also relates to an RF device (17). In addition a penetration layer (5) is introduced between the passivation layer (7) and the silicon support substrate (3) to ensure sufficient high resistivity of underneath RF features while dislocation movements in the support substrate (3) can be kept low.
(FR) La présente invention concerne un substrat semi-conducteur sur isolant (1) destiné à être utilisé dans des applications RF, en particulier un substrat de silicium sur isolant, comportant une couche semi-conductrice supérieure (11), une couche d'oxyde enterrée (9) et une couche de passivation (7) sur un substrat de support en silicium (3) ainsi qu'un procédé correspondant. L'invention concerne également un dispositif radiofréquence (17). En outre, une couche de pénétration (5) est introduite entre la couche de passivation (7) et le substrat de support en silicium (3) afin d'assurer une résistivité élevée suffisante des caractéristiques RF sous-jacentes tandis que les mouvements de dislocation dans le substrat de support (3) peuvent être maintenus à un faible niveau.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)