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1. WO2017166341 - METHOD FOR MANUFACTURING TFT SUBSTRATE AND MANUFACTURED TFT SUBSTRATE

Publication Number WO/2017/166341
Publication Date 05.10.2017
International Application No. PCT/CN2016/079805
International Filing Date 21.04.2016
IPC
H01L 21/77 2017.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
G02F 1/136 2006.01
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
H01L 27/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
CPC
G02F 1/134363
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
1333Constructional arrangements; ; Manufacturing methods
1343Electrodes
134309characterised by their geometrical arrangement
134363for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
G02F 1/13439
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
1333Constructional arrangements; ; Manufacturing methods
1343Electrodes
13439characterised by their electrical, optical, physical properties; materials therefor; method of making
G02F 1/136
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
G02F 1/136209
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
136209Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
G02F 1/136286
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
136286Wiring, e.g. gate line, drain line
G02F 1/1368
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
1368in which the switching element is a three-electrode device
Applicants
  • 深圳市华星光电技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO.,LTD. [CN]/[CN]
Inventors
  • 葛世民 GE, Shimin
Agents
  • 深圳市德力知识产权代理事务所 COMIPS INTELLECTUAL PROPERTY OFFICE
Priority Data
201610194250.230.03.2016CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) METHOD FOR MANUFACTURING TFT SUBSTRATE AND MANUFACTURED TFT SUBSTRATE
(FR) PROCÉDÉ DE FABRICATION DE SUBSTRAT POUR TFT ET SUBSTRAT POUR TFT FABRIQUÉ
(ZH) TFT基板的制作方法及制得的TFT基板
Abstract
(EN)
A method for manufacturing a TFT substrate, and a manufactured TFT substrate. By using the characteristics of high transmittance for visible light exhibited by a transparent metal oxide conductive material, and by using a processing approach to obtain a transparent metal oxide conductor by doping a transparent metal oxide semiconductor, the method for manufacturing the TFT substrate forms an active layer (70) and a pixel electrode (80) simultaneously so as to achieve the results of reducing the number of photomasks, improving production efficiency and reducing production costs. Furthermore, by means of using only one semi-transparent mask (15) for exposure, forming a common electrode (22) by means of etching as well as a stacked light-shielding layer composed by a light-shielding layer (30) and a transparent conductive layer (21), the number of photomasks can be further reduced; providing a light-shielding layer below the TFT prevents light irradiation from impacting the electrical stability of the TFT. The TFT substrate provided according to the present disclosure has simple manufacturing procedure, low production costs, and a light-shielding layer provided below TFT, which avoids impact of light irradiation on the electrical stability of the TFT.
(FR)
L’invention concerne un procédé de fabrication de substrat pour TFT et un substrat pour TFT fabriqué. Grâce aux caractéristiques de haute transmittance de la lumière visible présentées par un matériau conducteur d’oxyde de métal transparent, et au moyen d’une approche de traitement pour obtenir un conducteur d’oxyde de métal transparent en dopant un semi-conducteur d’oxyde de métal transparent, le procédé de fabrication du substrat de TFT forme une couche active (70) et une électrode de pixel (80) simultanément afin d’obtenir les résultats de réduction du nombre de photomasques, d’amélioration du rendement de production et de réduction des coûts de production. En outre, grâce à l’utilisation d’un seul masque semi-transparent (15) pour l’exposition, à la formation d’une électrode commune (22) par gravure ainsi que d’une couche de protection contre la lumière empilée composée d’une couche de protection contre la lumière (30) et d’une couche conductrice transparente (21), le nombre de photomasques peut être encore réduit ; la disposition d’une couche de protection contre la lumière sous le TFT évite que le rayonnement lumineux influence la stabilité électrique du TFT. Le substrat de TFT selon la présente invention présente une procédure de fabrication simple, de faibles coûts de production, et une couche de protection contre la lumière disposée sous le TFT, ce qui évite que le rayonnement lumineux influence la stabilité électrique du TFT.
(ZH)
一种TFT基板的制作方法及制得的TFT基板,TFT基板的制作方法利用透明金属氧化物导体材料可见光透过率较高的特点以及将透明金属氧化物半导体掺杂处理成透明金属氧化物导体的方法,同时形成有源层(70)与像素电极(80),能够达到减少光罩次数,提高生产效率和降低生产成本的目的;此外,仅采用一道半透光罩(15)曝光、刻蚀形成公共电极(22)以及遮光层(30)和透明导电层(21)形成的叠层遮光层,可进一步减少光罩次数,通过TFT下方设置遮光层,避免了TFT电性稳定性受到光照的影响。提供的TFT基板,制程简单,生产成本低,且TFT下方设有遮光层,避免了TFT电性稳定性受到光照的影响。
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