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1. (WO2017166337) THIN-FILM TRANSISTOR, METHOD FOR FABRICATING THIN-FILM TRANSISTOR, AND LIQUID-CRYSTAL DISPLAY PANEL
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/166337 International Application No.: PCT/CN2016/079272
Publication Date: 05.10.2017 International Filing Date: 14.04.2016
IPC:
H01L 27/12 (2006.01) ,H01L 29/786 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12
the substrate being other than a semiconductor body, e.g. an insulating body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
Applicants: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.[CN/CN]; No.9-2, Tangming Rd, Guangming New District Shenzhen, Guangdong 518132, CN
Inventors: ZHAO, Shuli; CN
LU, Macai; CN
Agent: SCIHEAD IP LAW FIRM; Room 1508, Huihua Commercial&Trade Building No. 80, XianLie Zhong Road, Yuexiu District Guangzhou, Guangdong 510070, CN
Priority Data:
201610182408.428.03.2016CN
Title (EN) THIN-FILM TRANSISTOR, METHOD FOR FABRICATING THIN-FILM TRANSISTOR, AND LIQUID-CRYSTAL DISPLAY PANEL
(FR) TRANSISTOR À FILM MINCE, PROCÉDÉ DE FABRICATION DE TRANSISTOR À FILM MINCE ET PANNEAU D'AFFICHAGE À CRISTAUX LIQUIDES
(ZH) 薄膜晶体管、薄膜晶体管的制备方法及液晶显示面板
Abstract:
(EN) Provided are a thin-film transistor (10), a liquid-crystal display panel, and a method for fabricating the thin-film transistor (10). The thin-film transistor (10) comprises: a substrate (110); a gate region (120) arranged on the surface of the substrate (110); a dielectric layer (130) covering the gate region (120); a first electrically conductive part (141) arranged on the dielectric layer (130) surface away from the gate region (120); a second electrically conductive part (142) arranged on the dielectric layer (130) surface away from the gate region (120), and the second electrically conductive part (142) and first electrically conductive part (141) being spaced apart from each other; a source region (150) arranged on the first electrically conductive part (141) surface away from the dielectric layer (130); a drain region (160) arranged on the second electrically conductive part (142) surface away from the dielectric layer (130); an active layer (170) arranged on the dielectric layer (130) surface away from the gate region (120), the two opposite ends of the active layer (170) being electrically connected to the source region (150) and the drain region (160), respectively; a passivating layer (180) covering the source region (150), drain region (160), and active layer (170).
(FR) L'invention concerne un transistor à film mince (10), un panneau d'affichage à cristaux liquides, et un procédé de fabrication du transistor à film mince (10). Le transistor à film mince (10) comprend : un substrat (110) ; une région de grille (120) disposée sur la surface du substrat (110) ; une couche diélectrique (130) recouvrant la région de grille (120) ; une première partie électriquement conductrice (141) disposée sur la couche diélectrique (130) à distance de la région de grille (120) ; une seconde partie électriquement conductrice (142) disposée sur la surface de la couche diélectrique (130) à distance de la région de grille (120), et la seconde partie électriquement conductrice (142) et la première partie électriquement conductrice (141) étant espacées l'une de l'autre ; une région de source (150) disposée sur la surface de la première partie électriquement conductrice (141) à distance de la couche diélectrique (130) ; une région de drain (160) disposée sur la surface de la seconde partie électriquement conductrice (142) à distance de la couche diélectrique (130) ; une couche active (170) disposée sur la surface de la couche diélectrique (130) à distance de la région de grille (120), les deux extrémités opposées de la couche active (170) étant électriquement connectées à la région de source (150) et à la région de drain (160), respectivement ; une couche de passivation (180) recouvrant la région de source (150), la région de drain (160) et la couche active (170).
(ZH) 一种薄膜晶体管(10)、液晶显示面板及薄膜晶体管(10)的制备方法。薄膜晶体管(10)包括:基板(110);栅区(120),设置在基板(110)的表面;绝缘层(130),覆盖栅区(120);第一导电部(141),设置在绝缘层(130)远离栅区(120)的表面上;第二导电部(142),设置在绝缘层(130)远离栅区(120)的表面上,且第二导电部(142)与第一导电部(141)间隔设置;源区(150),设置在第一导电部(141)远离绝缘层(130)的表面上;漏区(160),设置在第二导电部(142)远离绝缘层(130)的表面上;有源层(170),设置在绝缘层(130)远离栅区(120)的表面上,且有源层(170)相对的两端分别与源区(150)及漏区(160)电连接;及钝化层(180),覆盖源区(150)、漏区(160)及有源层(170)。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)