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1. WO2017159810 - FIELD EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM

Publication Number WO/2017/159810
Publication Date 21.09.2017
International Application No. PCT/JP2017/010747
International Filing Date 16.03.2017
IPC
H01L 29/786 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
G09F 9/30 2006.1
GPHYSICS
09EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
30in which the desired character or characters are formed by combining individual elements
H01L 51/50 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H05B 33/02 2006.1
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33Electroluminescent light sources
02Details
H05B 33/14 2006.1
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33Electroluminescent light sources
12Light sources with substantially two-dimensional radiating surfaces
14characterised by the chemical or physical composition or the arrangement of the electroluminescent material
CPC
G02F 1/136286
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
136286Wiring, e.g. gate line, drain line
G02F 1/1368
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
1368in which the switching element is a three-electrode device
G02F 1/15
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
15based on an electrochromic effect
G09F 9/30
GPHYSICS
09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
30in which the desired character or characters are formed by combining individual elements
G09G 2300/0439
GPHYSICS
09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
2300Aspects of the constitution of display devices
04Structural and physical details of display devices
0439Pixel structures
H01L 27/1225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1222with a particular composition, shape or crystalline structure of the active layer
1225with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
Applicants
  • 株式会社リコー RICOH COMPANY, LTD. [JP]/[JP] (AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BE, BF, BG, BH, BJ, BN, BR, BW, BY, BZ, CA, CF, CG, CH, CI, CL, CM, CN, CO, CR, CU, CY, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, FR, GA, GB, GD, GE, GH, GM, GN, GQ, GR, GT, GW, HN, HR, HU, ID, IE, IL, IN, IR, IS, IT, JP, KE, KG, KH, KM, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MC, MD, ME, MG, MK, ML, MN, MR, MT, MW, MX, MY, MZ, NA, NE, NG, NI, NL, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SI, SK, SL, SM, SN, ST, SV, SY, SZ, TD, TG, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, ZA, ZM, ZW)
  • 植田 尚之 UEDA, Naoyuki [JP]/[JP] (US)
  • 中村 有希 NAKAMURA, Yuki [JP]/[JP] (US)
  • 安部 由希子 ABE, Yukiko [JP]/[JP] (US)
  • 松本 真二 MATSUMOTO, Shinji [JP]/[JP] (US)
  • 曽根 雄司 SONE, Yuji [JP]/[JP] (US)
  • 早乙女 遼一 SAOTOME, Ryoichi [JP]/[JP] (US)
  • 新江 定憲 ARAE, Sadanori [JP]/[JP] (US)
  • 草柳 嶺秀 KUSAYANAGI, Minehide [JP]/[JP] (US)
Inventors
  • 植田 尚之 UEDA, Naoyuki
  • 中村 有希 NAKAMURA, Yuki
  • 安部 由希子 ABE, Yukiko
  • 松本 真二 MATSUMOTO, Shinji
  • 曽根 雄司 SONE, Yuji
  • 早乙女 遼一 SAOTOME, Ryoichi
  • 新江 定憲 ARAE, Sadanori
  • 草柳 嶺秀 KUSAYANAGI, Minehide
Agents
  • 廣田 浩一 HIROTA, Koichi
Priority Data
2016-05557118.03.2016JP
2016-15792010.08.2016JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) FIELD EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM
(FR) TRANSISTOR À EFFET DE CHAMP, ÉLÉMENT D'AFFICHAGE, DISPOSITIF D'AFFICHAGE D'IMAGES, ET SYSTÈME
(JA) 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
Abstract
(EN) A field effect transistor has: a gate electrode for applying a gate voltage; a source electrode and a drain electrode for transmitting electrical signals; an active layer formed between the source electrode and the drain electrode; and a gate insulating layer formed between the gate electrode and the active layer, the field effect transistor being characterized in that the active layer includes at least two types of oxide layer, an A layer and a B layer; and the active layer satisfies condition (1) and/or (2) noted below. Condition (1): The active layer is composed of three or more oxide layers, including two or more of the A layer. Condition (2): The bandgap of the A layer is smaller than the bandgap of the B layer, and the oxygen affinity of the A layer is equal to or greater than the oxygen affinity of the B layer.
(FR) L'invention concerne un transistor à effet de champ comprenant: une électrode de grille servant à appliquer une tension de grille; une électrode de source et une électrode de drain servant à transmettre des signaux électriques; une couche active formée entre l'électrode de source et l'électrode de drain; et une couche d'isolation de grille formée entre l'électrode de grille et la couche active, le transistor à effet de champ étant caractérisé en ce que la couche active comprend au moins deux types de couche d'oxyde, une couche A et une couche B; et la couche active satisfaisant les conditions (1) et/ou (2) énoncées ci-dessous. Condition (1) : la couche active est composée d'au moins trois couches d'oxyde, comprenant au moins deux couches de type A. Condition (2) : la bande interdite de la couche A est plus petite que la bande interdite de la couche B, et l'affinité pour l'oxygène de la couche A est supérieure ou égale à l'affinité pour l'oxygène de la couche B.
(JA) ゲート電圧を印加するためのゲート電極と、 電気信号を伝達するためのソース電極及びドレイン電極と、 前記ソース電極及び前記ドレイン電極との間に形成された活性層と、 前記ゲート電極と前記活性層との間に形成されたゲート絶縁層と、を有する電界効果型トランジスタであって、 前記活性層が、少なくともA層とB層の2種類の酸化物層を含み、 前記活性層が、下記条件(1)及び(2)の少なくともいずれかを満たすことを特徴とする電界効果型トランジスタ。 条件(1):前記活性層が、2層以上の前記A層を含む3層以上の酸化物層から構成される。 条件(2)前記A層のバンドギャップが、前記B層のバンドギャップより小さく、かつ前記A層の酸素親和力が、前記B層の酸素親和力以上である。
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