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1. (WO2017157304) MICROFLUID ION SOURCE CHIP AND PREPARATION METHOD THEREFOR
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Pub. No.: WO/2017/157304 International Application No.: PCT/CN2017/076804
Publication Date: 21.09.2017 International Filing Date: 15.03.2017
IPC:
B01L 3/00 (2006.01) ,G03F 7/00 (2006.01)
B PERFORMING OPERATIONS; TRANSPORTING
01
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
L
CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
3
Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
Applicants:
清华大学深圳研究生院 GRADUATE SCHOOL AT SHENZHEN, TSINGHUA UNIVERSITY [CN/CN]; 中国广东省深圳市 南山区西丽大学城清华校区 Tsinghua Campus, University Town, Xili, Nanshan District Shenzhen, Guangdong 518055, CN
Inventors:
钱翔 QIAN, Xiang; CN
于赐龙 YU, Cilong; CN
王晓浩 WANG, Xiaohao; CN
余泉 YU, Quan; CN
倪凯 NI, Kai; CN
Agent:
深圳新创友知识产权代理有限公司 CHINA TRUER IP; 中国广东省深圳市 福田区车公庙深南大道南江西世纪豪庭(江西大厦)10A3 10A3, Jiangxi Shiji Haoting Building (Jiangxi Building), Shennan Road South, Chegong Miao, Futian District Shenzhen, Guangdong 518040, CN
Priority Data:
201610149298.116.03.2016CN
Title (EN) MICROFLUID ION SOURCE CHIP AND PREPARATION METHOD THEREFOR
(FR) PUCE DE SOURCE D'IONS MICROFLUIDIQUE ET PROCÉDÉ DE PRÉPARATION ASSOCIÉ
(ZH) 一种微流体离子源芯片及其制备方法
Abstract:
(EN) Provided are a microfluid ion source chip (500) and a preparation method therefor. The microfluid ion source chip comprises a discrete phase layer, a first continuous phase layer and a spraying port. The discrete phase layer comprises a discrete phase storage pool (205) and a discrete phase flow channel (206). The first continuous phase layer comprises a first continuous phase storage pool (207) and a first continuous phase flow channel (208). The first continuous phase flow channel (208) starts from the first continuous phase storage pool (207) and is divided into two first continuous phase flow channel branches (2081, 2082) at a set position. The two first continuous phase flow channel branches (2081, 2082) are converged at a spraying port (204). The discrete phase flow channel (206) is in communication with the discrete phase storage pool (205) and the spraying port (204), and the discrete phase flow channel (206) is located between the two first continuous phase flow channel branches (2081, 2082).
(FR) L'invention concerne une puce de source d'ions microfluidique (500) et le procédé de préparation associé. La puce de source d'ions microfluidique comprend une couche de phase discrète, une première couche de phase continue et un orifice de pulvérisation. La couche de phase discrète comprend un bac de stockage de phase discrète (205) et un canal d'écoulement de phase discrète (206). La première couche de phase continue comprend un premier bac de stockage de phase continue (207) et un premier canal d'écoulement de phase continue (208). Le premier canal d'écoulement de phase continue (208) commence à partir du premier bac de stockage de phase continue (207) et est divisé en deux premières ramifications de canal d'écoulement de phase continue (2081, 2082) dans une position définie. Les deux premières ramifications de canal d'écoulement de phase continue (2081, 2082) convergent au niveau d'un orifice de pulvérisation (204). Le canal d'écoulement de phase discrète (206) est en communication avec le bac de stockage de phase discrète (205) et l'orifice de pulvérisation (204), et le canal d'écoulement de phase discrète (206) est situé entre les deux premières ramifications de canal d'écoulement de phase continue (2081, 2082).
(ZH) 一种微流体离子源芯片(500)及其制备方法,包括离散相层、第一连续相层和喷雾口,离散相层包括离散相储存池(205)和离散相流道(206),第一连续相层包括第一连续相储存池(207)和第一连续相流道(208),第一连续相流道(208)始于第一连续相储存池(207)并于设定位置分成两条第一连续相流道支路(2081、2082),两条第一连续相流道支路(2081、2082)汇合于喷雾口(204),离散相流道(206)连通离散相储存池(205)和喷雾口(204),离散相流道(206)位于两条第一连续相流道支路(2081、2082)之间。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)