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1. (WO2017157073) LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME
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Pub. No.: WO/2017/157073 International Application No.: PCT/CN2016/111664
Publication Date: 21.09.2017 International Filing Date: 23.12.2016
IPC:
H01L 33/08 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
08
with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
Applicants:
天津三安光电有限公司 TIANJIN SANAN OPTOELECTRONICS CO., LTD. [CN/CN]; 中国天津市 西青区华苑产业区海泰南道20号 No.20 Haitainan Road, Huayuan New Technology Industry Development Area Xiqing District Tianjin 300384, CN
Inventors:
郭桓邵 KUO, Huan-shao; CN
吴俊毅 WU, Chun-Yi; CN
吴超瑜 WU, Chaoyu; CN
陶青山 TAO, Ching-Shan; CN
王笃祥 WANG, Duxiang; CN
Priority Data:
201610151425.117.03.2016CN
Title (EN) LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME
(FR) DIODE ÉLECTROLUMINESCENTE ET SON PROCÉDÉ DE FABRICATION
(ZH) 发光二极管及其制作方法
Abstract:
(EN) The present invention provides a light-emitting diode and method for manufacturing same; selective growth is used to form a segmented quantum well, and a photon reabsorption effect in the quantum well in the LED is prevented, increasing the external extraction efficiency and increasing brightness. The light-emitting diode comprises a light-emitting diode, comprising in sequence a first semiconductor layer, an active layer, and a second semiconductor layer; the upper surface of said first semiconductor layer at least is divided into a first growth region and a second growth region; by means of selective epitaxial growth, said active layer is formed in said first growth region; by means of epitaxial growth, said second semiconductor layer covers the active layer and the second growth region of the first semiconductor layer.
(FR) La présente invention concerne une diode électroluminescente (DEL) et son procédé de fabrication; une croissance sélective est utilisée pour former un puits quantique segmenté, et un effet de réabsorption de photons dans le puits quantique dans la DEL est empêché, augmentant le rendement d'extraction externe et augmentant la luminosité. La diode électroluminescente est une diode électroluminescente comprenant en séquence une première couche semi-conductrice, une couche active et une seconde couche semi-conductrice; la surface supérieure de ladite première couche semi-conductrice au moins est divisée en une première région de croissance et une seconde région de croissance; au moyen d'une croissance épitaxiale sélective, ladite couche active est formée dans ladite première région de croissance; au moyen d'une croissance épitaxiale, ladite seconde couche semi-conductrice recouvre la couche active et la seconde région de croissance de la première couche semi-conductrice.
(ZH) 本发明提供了一种发光二极管及其制作方法,其利用选择性生长方式形成分段的量子井,避免光子在LED 内量子井的再吸收效应,使得外部萃取效率提升,亮度增加。所述发光二极管包括发光二极管,依次包括第一半导体层、有源层和第二半导体层,所述第一半导体层的上表面至少划分为第一生长区和第二生长区,所述有源层通过选择性外延生长的方式仅形成于所述第一生长区,所述第二半导体层通过外延生长覆盖所述有源层及第一半导体层的第二生长区。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)