Search International and National Patent Collections

1. (WO2017156921) BATTERY MANAGEMENT CHIP CIRCUIT ON THE BASIS OF SILICON ON INSULATOR (SOI) PROCESS

Pub. No.:    WO/2017/156921    International Application No.:    PCT/CN2016/088056
Publication Date: Fri Sep 22 01:59:59 CEST 2017 International Filing Date: Sat Jul 02 01:59:59 CEST 2016
IPC: H01M 10/42
H01L 27/02
H01L 27/092
Applicants: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
中国科学院上海微系统与信息技术研究所
Inventors: CHENG, Xinhong
程新红
LI, Xinchang
李新昌
WU, Zhonghao
吴忠昊
XU, Dawei
徐大伟
YU, Yuehui
俞跃辉
Title: BATTERY MANAGEMENT CHIP CIRCUIT ON THE BASIS OF SILICON ON INSULATOR (SOI) PROCESS
Abstract:
Provided in the present invention is a battery management chip circuit on the basis of a silicon on insulator (SOI) process. The battery management chip circuit comprises a high-voltage multi-path gate MUX, a voltage reference circuit, a Sigma-delta analog-to-digital converter (ADC) (comprising an analogue modulator and a digital filter), a serial peripheral interface (SPI) communication circuit, a functional control circuit and a voltage value register. The battery management chip circuit is integrated on the basis of an SOI high-voltage process; in particular, a high-voltage metal oxide semiconductor (MOS) employed by the battery management chip circuit is a high-voltage MOS device unit on the basis of the SOI process. Moreover, the present invention emphasizes the configurations of interface circuit-chopping circuit of the high-voltage multi-path gate MUX and the Sigma-delta ADC, so as to illustrate the advantages brought about by employing the SOI process design and tapeout, including reduced difficulty for circuit design and reduced layout area, etc.