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1. (WO2017156913) FINFET, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE COMPRISING SAME

Pub. No.:    WO/2017/156913    International Application No.:    PCT/CN2016/087240
Publication Date: Fri Sep 22 01:59:59 CEST 2017 International Filing Date: Tue Jun 28 01:59:59 CEST 2016
IPC: H01L 29/78
H01L 21/336
Applicants: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
中国科学院微电子研究所
Inventors: ZHU, Huilong
朱慧珑
Title: FINFET, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE COMPRISING SAME
Abstract:
Provided are a fin field-effect transistor (FinFET), a manufacturing method thereof, and an electronic device comprising same. The FinFET can comprise: a fin (F) formed on top of a substrate (1001); a gate stack formed on top of the substrate (1001) and intersecting with the fin (F); and a gate sidewall (1009) formed on a side wall of the gate stack, wherein the gate sidewall (1009) comprises a dielectric material and a negative capacitance material.