Search International and National Patent Collections

1. (WO2017156808) METHOD FOR MANUFACTURING THIN FILM TRANSISTOR

Pub. No.:    WO/2017/156808    International Application No.:    PCT/CN2016/078761
Publication Date: Fri Sep 22 01:59:59 CEST 2017 International Filing Date: Sat Apr 09 01:59:59 CEST 2016
IPC: G02F 1/1368
H01L 21/266
H01L 21/265
Applicants: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
深圳市华星光电技术有限公司
Inventors: LU, Macai
卢马才
Title: METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
Abstract:
A method for manufacturing a thin film transistor comprises: providing a substrate base (21); depositing a buffering layer and patterning same; sequentially depositing an insulating layer (23) and a first metal layer (24); coating a photoresist on the first metal layer (24); performing metal etching on the first metal layer (24); ashing the photoresist (25); performing metal etching on the first metal layer (24) in a low-doped region (242); implanting ions to an active region (22); and removing the photoresist (25).