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1. (WO2017156806) METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/156806 International Application No.: PCT/CN2016/078658
Publication Date: 21.09.2017 International Filing Date: 07.04.2016
IPC:
C23C 4/12 (2016.01) ,C23C 4/04 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
4
Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
12
characterised by the method of spraying
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
4
Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
04
characterised by the coating material
Applicants:
弘大伟业(北京)工程技术研究院有限公司 HONG WE YES ENGINEERING TECHNOLOGY RESEARCH INSTITUTE CO., LTD. [CN/CN]; 中国北京市海淀区昆明湖南路51号A座二层211号 No.211, Second Floor, Building A, No.51, Kunminghu South Road, Haidian District Beijing 100097, CN
Inventors:
李光武 LI, Guangwu; CN
Agent:
北京同立钧成知识产权代理有限公司 LEADER PATENT & TRADEMARK FIRM; 中国北京市 海淀区西直门北大街32号枫蓝国际A座8F-6 8F-6 Bldg. A, Winland International Center No. 32 Xizhimen North Street Haidian District, Beijing 100082, CN
Priority Data:
201610158724.818.03.2016CN
Title (EN) METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
(FR) PROCÉDÉ ET DISPOSITIF DE FABRICATION DE SUBSTRAT SEMI-CONDUCTEUR
(ZH) 制造半导体基片的方法和装置
Abstract:
(EN) Provided are a method and a device for manufacturing a semiconductor substrate. The method for manufacturing a semiconductor substrate comprises the following steps: heating a semiconductor material to the molten state for obtaining a molten semiconductor material, thermally spraying the molten semiconductor material onto the substrate by using a thermal spraying gun, then cooling to solidify the molten semiconductor material on the substrate, and finally obtaining the semiconductor substrate. According to the method of the present invention, during the manufacture of the semiconductor substrate, the material utilization rate is high, the manufacturing cost is low, the manufactured semiconductor substrate is large in size, controllable in thickness and high in purity, and the application prospect is wide.
(FR) L'invention concerne un procédé et un dispositif de fabrication de substrat semi-conducteur. Le procédé de fabrication de substrat semi-conducteur comprend les étapes suivantes : le chauffage d'un matériau semi-conducteur jusqu'à l'état fondu pour obtenir un matériau semi-conducteur fondu ; la pulvérisation, par pulvérisation thermique, du matériau semi-conducteur fondu sur le substrat à l'aide d'un pistolet de pulvérisation thermique ; le refroidissement pour solidifier le matériau semi-conducteur fondu sur le substrat et pour obtenir finalement le substrat semi-conducteur. Selon le procédé de la présente invention, pendant la fabrication du substrat semi-conducteur, le taux d'utilisation de matériau est élevé, le coût de fabrication est faible, le substrat semi-conducteur fabriqué est de grande taille, d'épaisseur pouvant être régulée et de pureté élevée, et le potentiel d'application est large.
(ZH) 本发明提供一种制造半导体基片的方法和装置。制造半导体基片的方法包括如下步骤:将半导体材料加热至熔融状态,得到熔融半导体材料;利用热喷涂枪将所述熔融半导体材料热喷涂至基板上,随后降温,使基板上的熔融半导体材料凝固,得到半导体基片。本发明的方法在制造半导体基片时材料利用率高、制造成本低,制造的半导体基片尺寸大、厚度可控、纯度高,应用前景广泛。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)