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1. (WO2017156803) PREPARATION METHOD FOR GRAPHENE THIN FILM TRANSISTOR

Pub. No.:    WO/2017/156803    International Application No.:    PCT/CN2016/078391
Publication Date: Fri Sep 22 01:59:59 CEST 2017 International Filing Date: Sat Apr 02 01:59:59 CEST 2016
IPC: H01L 21/336
H01L 29/786
H01L 29/16
Applicants: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD
武汉华星光电技术有限公司
Inventors: WANG, Xuanyun
王选芸
Title: PREPARATION METHOD FOR GRAPHENE THIN FILM TRANSISTOR
Abstract:
Provided is a preparation method for a graphene thin film transistor, comprising:depositing a graphene layer (22) on the surface of a copper foil (21);depositing a metal layer (23) on the surface of the graphene layer (22);attaching a supporting layer (24) on the surface of the metal layer (23) to form a graphene film sheet;placing the graphene film sheet into a corrosive solution until the copper foil (21) is fully dissolved, transferring the graphene film sheet to a target substrate, and removing the supporting layer (24); anddefining source and drain electrode patterns on the surface of the metal layer (23), preparing the source electrode and the drain electrode, and preparing a gate electrode on the target substrate.