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1. (WO2017156755) SELECTION DEVICE FOR USE IN BIPOLAR RESISTIVE MEMORY AND MANUFACTURING METHOD THEREFOR

Pub. No.:    WO/2017/156755    International Application No.:    PCT/CN2016/076667
Publication Date: Fri Sep 22 01:59:59 CEST 2017 International Filing Date: Sat Mar 19 00:59:59 CET 2016
IPC: H01L 21/82
Applicants: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
中国科学院微电子研究所
Inventors: LIU, Ming
刘明
LUO, Qing
罗庆
XU, Xiaoxin
许晓欣
LV, Hangbing
吕杭炳
LONG, Shibing
龙世兵
LIU, Qi
刘琦
Title: SELECTION DEVICE FOR USE IN BIPOLAR RESISTIVE MEMORY AND MANUFACTURING METHOD THEREFOR
Abstract:
A selection device for use in a bipolar resistive memory, comprising: a lower electrode (21) formed on a substrate (20); a first metal oxide layer (22) doped with metal atoms formed above the lower electrode (21); a second metal oxide layer (23) formed above the first metal oxide layer (22) doped with metal atoms; and an upper electrode layer (24) formed above the second metal oxide layer (23). The electrical current density of the selection device is increased.