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1. (WO2017156540) INTEGRATED HIGH-SIDE DRIVER FOR P-N BIMODAL POWER DEVICE
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Pub. No.: WO/2017/156540 International Application No.: PCT/US2017/022183
Publication Date: 14.09.2017 International Filing Date: 13.03.2017
IPC:
H01L 29/76 (2006.01) ,H01L 21/8238 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8238
Complementary field-effect transistors, e.g. CMOS
Applicants:
TEXAS INSTRUMENTS INCORPORATED [US/US]; P.O. Box 655474, Mail Station 3999 Dallas, TX 75265-5474, US
TEXAS INSTRUMENTS JAPAN LIMITED [JP/JP]; 24-1, Nishi-Shinjuku 6 Chome Shinjuku-ku Tokyo 160-8366, JP (JP)
Inventors:
ZHANG, Yongxi; US
PENDHARKAR, Sameer P.; US
HOWER, Philip L.; US
GIOMBANCO, Salvatore; IT
MARINO, Filippo; IT
SRIDHAR, Seetharaman; US
Agent:
DAVIS, Jr., Michael A.; US
TEXAS INSTRUMENT INCORPORATED; US
Priority Data:
15/067,92811.03.2016US
Title (EN) INTEGRATED HIGH-SIDE DRIVER FOR P-N BIMODAL POWER DEVICE
(FR) PILOTE CÔTÉ HAUTE PRESSION INTÉGRÉ POUR DISPOSITIF D'ALIMENTATION BIMODAL P-N
Abstract:
(EN) In described examples, an integrated circuit chip (102) includes a bimodal power N-P -Laterally Diffused Metal Oxide Semiconductor (LDMOS) device (104) having an N-gate (GN) coupled to receive an input signal (IN) and a level shifter (108) coupled to receive the input signal and to provide a control signal to a P-gate driver (106) of the N-P-LDMOS device.
(FR) L'invention concerne, dans les exemples décrits, une puce de circuit intégré (102) comprenant un dispositif métal-oxyde-semi-conducteur à diffusion latérale (LDMOS) N-P bimodal d'alimentation (104) ayant une grille N (GN) couplée afin de recevoir un signal d'entrée (IN) et un dispositif de décalage de niveau (108) couplé pour recevoir le signal d'entrée et pour fournir un signal de commande à un pilote de grille P (106) du dispositif LDMOS N-P.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)